Inventor
KAMEYAMA SATORU
JP21 patents
⚠️ This page may combine multiple inventors who share the name “KAMEYAMA SATORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYOTA MOTOR CO LTD
11 patentsUS10014368B2Jul 3, 2018
Semiconductor device and manufacturing method of semiconductor device
TOYOTA MOTOR CO LTD2 citations72
US9735150B2Aug 15, 2017
Semiconductor device and manufacturing method thereof
TOYOTA MOTOR CO LTD4 citations70
US9887191B2Feb 6, 2018
Semiconductor device
TOYOTA MOTOR CO LTD1 citations52
US9887190B2Feb 6, 2018
Semiconductor device and method for manufacturing the same
TOYOTA MOTOR CO LTD0 citations51
US9793266B2Oct 17, 2017
Semiconductor device
TOYOTA MOTOR CO LTD1 citations51
US9698103B2Jul 4, 2017
Semiconductor device and manufacturing method therefor
TOYOTA MOTOR CO LTD1 citations51
US9577081B2Feb 21, 2017
Semiconductor device and method for manufacturing the same
TOYOTA MOTOR CO LTD1 citations51
US9570353B1Feb 14, 2017
Method for manufacturing semiconductor device
TOYOTA MOTOR CO LTD1 citations49
US9741554B2Aug 22, 2017
Method of manufacturing semiconductor device
TOYOTA MOTOR CO LTD0 citations43
US9966372B2May 8, 2018
Semiconductor device and method of manufacturing semiconductor device having parallel contact holes between adjacent trenches
TOYOTA MOTOR CO LTD0 citations40
US9780163B2Oct 3, 2017
Method of manufacturing semiconductor device and semiconductor device
TOYOTA MOTOR CO LTD0 citations40
KAMEYAMA SATORU
4 patentsUS9397206B2Jul 19, 2016
Semiconductor device and method for manufacturing the same
KAMEYAMA SATORU4 citations70
US9627955B2Apr 18, 2017
Semiconductor module
KAMEYAMA SATORU0 citations49
US10074719B2Sep 11, 2018
Semiconductor device in which an insulated-gate bipolar transistor ( IGBT) region and a diode region are formed on one semiconductor substrate
KAMEYAMA SATORU0 citations39
US9633997B2Apr 25, 2017
Semiconductor device and method for manufacturing semiconductor device
KAMEYAMA SATORU0 citations37