P

Inventor

OOWADA KEN

JP67 patents
⚠️ This page may combine multiple inventors who share the name “OOWADA KEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES INC

19 patents
US9214240B2Dec 15, 2015

Dynamic erase depth for improved endurance of non-volatile memory

SANDISK TECHNOLOGIES INC20 citations93
US7978527B2Jul 12, 2011

Verification process for non-volatile storage

SANDISK TECHNOLOGIES INC13 citations93
US8908441B1Dec 9, 2014

Double verify method in multi-pass programming to suppress read noise

SANDISK TECHNOLOGIES INC20 citations92
US8902668B1Dec 2, 2014

Double verify method with soft programming to suppress read noise

SANDISK TECHNOLOGIES INC21 citations92
US9548130B2Jan 17, 2017

Non-volatile memory with prior state sensing

SANDISK TECHNOLOGIES INC10 citations84
US9013928B1Apr 21, 2015

Dynamic bit line bias for programming non-volatile memory

SANDISK TECHNOLOGIES INC9 citations84
US8958249B2Feb 17, 2015

Partitioned erase and erase verification in non-volatile memory

SANDISK TECHNOLOGIES INC13 citations84
US8953386B2Feb 10, 2015

Dynamic bit line bias for programming non-volatile memory

SANDISK TECHNOLOGIES INC14 citations84
US8929142B2Jan 6, 2015

Programming select gate transistors and memory cells using dynamic verify level

SANDISK TECHNOLOGIES INC11 citations84
US8913432B2Dec 16, 2014

Programming select gate transistors and memory cells using dynamic verify level

SANDISK TECHNOLOGIES INC9 citations84
US8885420B2Nov 11, 2014

Erase for non-volatile storage

SANDISK TECHNOLOGIES INC15 citations84
US8885416B2Nov 11, 2014

Bit line current trip point modulation for reading nonvolatile storage elements

SANDISK TECHNOLOGIES INC13 citations84
US8755234B2Jun 17, 2014

Temperature based compensation during verify operations for non-volatile storage

SANDISK TECHNOLOGIES INC6 citations84
US7995394B2Aug 9, 2011

Program voltage compensation with word line bias change to suppress charge trapping in memory

SANDISK TECHNOLOGIES INC16 citations84
US9123424B2Sep 1, 2015

Optimizing pass voltage and initial program voltage based on performance of non-volatile memory

SANDISK TECHNOLOGIES INC10 citations82
US9543023B2Jan 10, 2017

Partial block erase for block programming in non-volatile memory

SANDISK TECHNOLOGIES INC9 citations81
USRE46264EJan 3, 2017

Verification process for non-volatile storage

SANDISK TECHNOLOGIES INC2 citations73
US8942047B2Jan 27, 2015

Bit line current trip point modulation for reading nonvolatile storage elements

SANDISK TECHNOLOGIES INC4 citations73
US9865352B2Jan 9, 2018

Program sequencing

SANDISK TECHNOLOGIES INC3 citations71

SANDISK TECHNOLOGIES LLC

16 patents
US11322483B1May 3, 2022

Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same

SANDISK TECHNOLOGIES LLC16 citations86
US11024393B1Jun 1, 2021

Read operation for non-volatile memory with compensation for adjacent wordline

SANDISK TECHNOLOGIES LLC18 citations86
US11004525B1May 11, 2021

Modulation of programming voltage during cycling

SANDISK TECHNOLOGIES LLC13 citations85
US11049580B1Jun 29, 2021

Modulation of programming voltage during cycling

SANDISK TECHNOLOGIES LLC6 citations83
US10971231B1Apr 6, 2021

Adaptive VPASS for 3D flash memory with pair string structure

SANDISK TECHNOLOGIES LLC8 citations83
US12046302B2Jul 23, 2024

Edge word line concurrent programming with verify for memory apparatus with on-pitch semi-circle drain side select gate technology

SANDISK TECHNOLOGIES LLC3 citations75
US11342029B2May 24, 2022

Non-volatile memory with switchable erase methods

SANDISK TECHNOLOGIES LLC2 citations73
US11342006B2May 24, 2022

Buried source line structure for boosting read scheme

SANDISK TECHNOLOGIES LLC3 citations73
US11094715B2Aug 17, 2021

Three-dimensional memory device including different height memory stack structures and methods of making the same

SANDISK TECHNOLOGIES LLC3 citations73
US10978156B2Apr 13, 2021

Concurrent programming of multiple cells for non-volatile memory devices

SANDISK TECHNOLOGIES LLC3 citations73
US10741579B2Aug 11, 2020

Three-dimensional memory device including different height memory stack structures and methods of making the same

SANDISK TECHNOLOGIES LLC3 citations73
US10978152B1Apr 13, 2021

Adaptive VPASS for 3D flash memory with pair string structure

SANDISK TECHNOLOGIES LLC3 citations72
US11551781B1Jan 10, 2023

Programming memory cells with concurrent storage of multi-level data as single-level data for power loss protection

SANDISK TECHNOLOGIES LLC1 citations63
US11397635B2Jul 26, 2022

Block quality classification at testing for non-volatile memory, and multiple bad block flags for product diversity

SANDISK TECHNOLOGIES LLC1 citations63
US11348649B2May 31, 2022

Threshold voltage setting with boosting read scheme

SANDISK TECHNOLOGIES LLC0 citations63
US11342028B2May 24, 2022

Concurrent programming of multiple cells for non-volatile memory devices

SANDISK TECHNOLOGIES LLC0 citations63

SANDISK CORP

7 patents

OOWADA KEN

2 patents

DONG YINGDA

2 patents

LI YAN

1 patent

DUTTA DEEPANSHU

1 patent

LEE DANA

1 patent

HEMINK GERRIT JAN

1 patent

Showing the top 50 of 67 patents by PatentIndex Score.