Inventor
OOWADA KEN
JP67 patents
⚠️ This page may combine multiple inventors who share the name “OOWADA KEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES INC
19 patentsUS9214240B2Dec 15, 2015
Dynamic erase depth for improved endurance of non-volatile memory
SANDISK TECHNOLOGIES INC20 citations93
US7978527B2Jul 12, 2011
Verification process for non-volatile storage
SANDISK TECHNOLOGIES INC13 citations93
US8908441B1Dec 9, 2014
Double verify method in multi-pass programming to suppress read noise
SANDISK TECHNOLOGIES INC20 citations92
US8902668B1Dec 2, 2014
Double verify method with soft programming to suppress read noise
SANDISK TECHNOLOGIES INC21 citations92
US9548130B2Jan 17, 2017
Non-volatile memory with prior state sensing
SANDISK TECHNOLOGIES INC10 citations84
US9013928B1Apr 21, 2015
Dynamic bit line bias for programming non-volatile memory
SANDISK TECHNOLOGIES INC9 citations84
US8958249B2Feb 17, 2015
Partitioned erase and erase verification in non-volatile memory
SANDISK TECHNOLOGIES INC13 citations84
US8953386B2Feb 10, 2015
Dynamic bit line bias for programming non-volatile memory
SANDISK TECHNOLOGIES INC14 citations84
US8929142B2Jan 6, 2015
Programming select gate transistors and memory cells using dynamic verify level
SANDISK TECHNOLOGIES INC11 citations84
US8913432B2Dec 16, 2014
Programming select gate transistors and memory cells using dynamic verify level
SANDISK TECHNOLOGIES INC9 citations84
US8885420B2Nov 11, 2014
Erase for non-volatile storage
SANDISK TECHNOLOGIES INC15 citations84
US8885416B2Nov 11, 2014
Bit line current trip point modulation for reading nonvolatile storage elements
SANDISK TECHNOLOGIES INC13 citations84
US8755234B2Jun 17, 2014
Temperature based compensation during verify operations for non-volatile storage
SANDISK TECHNOLOGIES INC6 citations84
US7995394B2Aug 9, 2011
Program voltage compensation with word line bias change to suppress charge trapping in memory
SANDISK TECHNOLOGIES INC16 citations84
US9123424B2Sep 1, 2015
Optimizing pass voltage and initial program voltage based on performance of non-volatile memory
SANDISK TECHNOLOGIES INC10 citations82
US9543023B2Jan 10, 2017
Partial block erase for block programming in non-volatile memory
SANDISK TECHNOLOGIES INC9 citations81
USRE46264EJan 3, 2017
Verification process for non-volatile storage
SANDISK TECHNOLOGIES INC2 citations73
US8942047B2Jan 27, 2015
Bit line current trip point modulation for reading nonvolatile storage elements
SANDISK TECHNOLOGIES INC4 citations73
US9865352B2Jan 9, 2018
Program sequencing
SANDISK TECHNOLOGIES INC3 citations71
SANDISK TECHNOLOGIES LLC
16 patentsUS11322483B1May 3, 2022
Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same
SANDISK TECHNOLOGIES LLC16 citations86
US11024393B1Jun 1, 2021
Read operation for non-volatile memory with compensation for adjacent wordline
SANDISK TECHNOLOGIES LLC18 citations86
US11004525B1May 11, 2021
Modulation of programming voltage during cycling
SANDISK TECHNOLOGIES LLC13 citations85
US11049580B1Jun 29, 2021
Modulation of programming voltage during cycling
SANDISK TECHNOLOGIES LLC6 citations83
US10971231B1Apr 6, 2021
Adaptive VPASS for 3D flash memory with pair string structure
SANDISK TECHNOLOGIES LLC8 citations83
US12046302B2Jul 23, 2024
Edge word line concurrent programming with verify for memory apparatus with on-pitch semi-circle drain side select gate technology
SANDISK TECHNOLOGIES LLC3 citations75
US11342029B2May 24, 2022
Non-volatile memory with switchable erase methods
SANDISK TECHNOLOGIES LLC2 citations73
US11342006B2May 24, 2022
Buried source line structure for boosting read scheme
SANDISK TECHNOLOGIES LLC3 citations73
US11094715B2Aug 17, 2021
Three-dimensional memory device including different height memory stack structures and methods of making the same
SANDISK TECHNOLOGIES LLC3 citations73
US10978156B2Apr 13, 2021
Concurrent programming of multiple cells for non-volatile memory devices
SANDISK TECHNOLOGIES LLC3 citations73
US10741579B2Aug 11, 2020
Three-dimensional memory device including different height memory stack structures and methods of making the same
SANDISK TECHNOLOGIES LLC3 citations73
US10978152B1Apr 13, 2021
Adaptive VPASS for 3D flash memory with pair string structure
SANDISK TECHNOLOGIES LLC3 citations72
US11551781B1Jan 10, 2023
Programming memory cells with concurrent storage of multi-level data as single-level data for power loss protection
SANDISK TECHNOLOGIES LLC1 citations63
US11397635B2Jul 26, 2022
Block quality classification at testing for non-volatile memory, and multiple bad block flags for product diversity
SANDISK TECHNOLOGIES LLC1 citations63
US11348649B2May 31, 2022
Threshold voltage setting with boosting read scheme
SANDISK TECHNOLOGIES LLC0 citations63
US11342028B2May 24, 2022
Concurrent programming of multiple cells for non-volatile memory devices
SANDISK TECHNOLOGIES LLC0 citations63
SANDISK CORP
7 patentsUS7355889B2Apr 8, 2008
Method for programming non-volatile memory with reduced program disturb using modified pass voltages
SANDISK CORP64 citations98
US7295478B2Nov 13, 2007
Selective application of program inhibit schemes in non-volatile memory
SANDISK CORP47 citations96
US7460404B1Dec 2, 2008
Boosting for non-volatile storage using channel isolation switching
SANDISK CORP20 citations93
US7447086B2Nov 4, 2008
Selective program voltage ramp rates in non-volatile memory
SANDISK CORP22 citations93
US7355888B2Apr 8, 2008
Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages
SANDISK CORP38 citations93
US7511995B2Mar 31, 2009
Self-boosting system with suppression of high lateral electric fields
SANDISK CORP10 citations84
US7463522B2Dec 9, 2008
Non-volatile storage with boosting using channel isolation switching
SANDISK CORP8 citations74
OOWADA KEN
2 patentsDONG YINGDA
2 patentsLI YAN
1 patentDUTTA DEEPANSHU
1 patentLEE DANA
1 patentHEMINK GERRIT JAN
1 patentShowing the top 50 of 67 patents by PatentIndex Score.