Inventor
JANG SUNG-HWAN
KR29 patents
⚠️ This page may combine multiple inventors who share the name “JANG SUNG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
9 patentsUS11495284B2Nov 8, 2022
Memory device including bitline sense amplifier and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US6838645B2Jan 4, 2005
Heater assembly for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations61
US10636366B2Apr 28, 2020
Display device operating in impulse mode and image display method therefor
SAMSUNG ELECTRONICS CO LTD1 citations60
US10157589B2Dec 18, 2018
Display apparatus and method of controlling the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11765905B2Sep 19, 2023
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations48
US10521959B2Dec 31, 2019
Methods of and devices for reducing structure noise through self-structure analysis
SAMSUNG ELECTRONICS CO LTD0 citations48
US9549439B2Jan 17, 2017
Display apparatus and method of driving backlight thereof
SAMSUNG ELECTRONICS CO LTD1 citations48
US10068038B2Sep 4, 2018
Semiconductor process simulation device and simulation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations47
US9490130B2Nov 8, 2016
Method of manufacturing three-dimensional semiconductor memory device in which an oxide layer is formed at bottom of vertical structure of the device
SAMSUNG ELECTRONICS CO LTD0 citations40
LG ENERGY SOLUTION LTD
4 patentsUS12294108B2May 6, 2025
Battery module and battery pack with improved safety
LG ENERGY SOLUTION LTD0 citations60
US12494549B2Dec 9, 2025
Battery module and battery pack comprising same
LG ENERGY SOLUTION LTD0 citations51
US12261328B2Mar 25, 2025
Battery module and battery pack comprising same
LG ENERGY SOLUTION LTD0 citations51
US12261320B2Mar 25, 2025
Battery module with reinforced safety
LG ENERGY SOLUTION LTD0 citations50
SAMSUNG ELECTRO MECH
3 patentsUS7737429B2Jun 15, 2010
Nitride based semiconductor device using nanorods and process for preparing the same
SAMSUNG ELECTRO MECH11 citations83
US7645688B2Jan 12, 2010
Method of growing non-polar m-plane nitride semiconductor
SAMSUNG ELECTRO MECH12 citations82
US7569461B2Aug 4, 2009
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
SAMSUNG ELECTRO MECH6 citations72
HYUNDAI MOTOR CO LTD
3 patentsUS9982772B2May 29, 2018
Shifting apparatus for vehicle
HYUNDAI MOTOR CO LTD0 citations51
US9014951B2Apr 21, 2015
Method and system for correcting engine torque based on vehicle load
HYUNDAI MOTOR CO LTD0 citations41
US8972127B2Mar 3, 2015
Control system for automatic transmission and method thereof
HYUNDAI MOTOR CO LTD0 citations41
SAMSUNG LED CO LTD
2 patentsUS7981714B2Jul 19, 2011
Nitride based semiconductor device using nanorods and process for preparing the same
SAMSUNG LED CO LTD6 citations73
US8026156B2Sep 27, 2011
Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device
SAMSUNG LED CO LTD4 citations61