Inventor
ZHANG FANGLIN
US17 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG FANGLIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
9 patentsUS11705203B2Jul 18, 2023
Digital temperature compensation filtering
SANDISK TECHNOLOGIES LLC2 citations73
US11361835B1Jun 14, 2022
Countermeasure for reducing peak current during programming by optimizing timing of latch scan operations
SANDISK TECHNOLOGIES LLC5 citations73
US11605436B2Mar 14, 2023
Countermeasure modes to address neighbor plane disturb condition in non-volatile memory structures
SANDISK TECHNOLOGIES LLC2 citations71
US11521691B1Dec 6, 2022
Triggering next state verify in program loop for nonvolatile memory
SANDISK TECHNOLOGIES LLC4 citations71
US12197783B2Jan 14, 2025
Command and address sequencing in parallel with data operations
SANDISK TECHNOLOGIES LLC0 citations62
US11521686B2Dec 6, 2022
Memory apparatus and method of operation using state bit-scan dependent ramp rate for peak current reduction during program operation
SANDISK TECHNOLOGIES LLC1 citations62
US11935599B2Mar 19, 2024
Burst programming of a NAND flash cell
SANDISK TECHNOLOGIES LLC0 citations59
US11587630B2Feb 21, 2023
Program with consecutive verifies for non-volatile memory
SANDISK TECHNOLOGIES LLC0 citations51
US11355208B2Jun 7, 2022
Triggering next state verify in progam loop for nonvolatile memory
SANDISK TECHNOLOGIES LLC0 citations50
SANDISK CORP
3 patentsUS7957197B2Jun 7, 2011
Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
SANDISK CORP22 citations92
US7474561B2Jan 6, 2009
Variable program voltage increment values in non-volatile memory program operations
SANDISK CORP25 citations92
US7450426B2Nov 11, 2008
Systems utilizing variable program voltage increment values in non-volatile memory program operations
SANDISK CORP34 citations92