P

Inventor

KWON DAE-JIN

KR31 patents
⚠️ This page may combine multiple inventors who share the name “KWON DAE-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US9029244B2May 12, 2015

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD417 citations99
US6835621B2Dec 28, 2004

Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon

SAMSUNG ELECTRONICS CO LTD69 citations96
US7232492B2Jun 19, 2007

Method of forming thin film for improved productivity

SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006

Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD27 citations92
US7095460B2Aug 22, 2006

Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations91
US7491654B2Feb 17, 2009

Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film

SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009

Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7288453B2Oct 30, 2007

Method of fabricating analog capacitor using post-treatment technique

SAMSUNG ELECTRONICS CO LTD17 citations84
US7125767B2Oct 24, 2006

Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7297591B2Nov 20, 2007

Method for manufacturing capacitor of semiconductor device

SAMSUNG ELECTRONICS CO LTD18 citations83
US7508649B2Mar 24, 2009

Multi-layered dielectric film of microelectronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7008837B2Mar 7, 2006

Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode

SAMSUNG ELECTRONICS CO LTD7 citations74
US9875791B2Jan 23, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9754660B2Sep 5, 2017

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9702041B2Jul 11, 2017

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD1 citations63
US7732296B2Jun 8, 2010

Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method

SAMSUNG ELECTRONICS CO LTD4 citations63
US7554146B2Jun 30, 2009

Metal-insulator-metal capacitor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7442982B2Oct 28, 2008

Capacitor having reaction preventing layer and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7435654B2Oct 14, 2008

Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7407897B2Aug 5, 2008

Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7199003B2Apr 3, 2007

Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor

SAMSUNG ELECTRONICS CO LTD3 citations62
US7615783B2Nov 10, 2009

Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations61
US9406502B2Aug 2, 2016

Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus

SAMSUNG ELECTRONICS CO LTD0 citations52
US7833580B2Nov 16, 2010

Method of forming a carbon nano-material layer using a cyclic deposition technique

SAMSUNG ELECTRONICS CO LTD1 citations52
US7679124B2Mar 16, 2010

Analog capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US7563672B2Jul 21, 2009

Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors

SAMSUNG ELECTRONICS CO LTD1 citations52
US7166541B2Jan 23, 2007

Method of forming dielectric layer using plasma enhanced atomic layer deposition technique

SAMSUNG ELECTRONICS CO LTD0 citations52
US7888772B2Feb 15, 2011

Electronic fuse having heat spreading structure

SAMSUNG ELECTRONICS CO LTD1 citations45
US10128254B2Nov 13, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations42

SUPREMA INC

1 patent