Inventor
KWON DAE-JIN
KR31 patents
⚠️ This page may combine multiple inventors who share the name “KWON DAE-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS9029244B2May 12, 2015
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD417 citations99
US6835621B2Dec 28, 2004
Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon
SAMSUNG ELECTRONICS CO LTD69 citations96
US7232492B2Jun 19, 2007
Method of forming thin film for improved productivity
SAMSUNG ELECTRONICS CO LTD23 citations92
US7091548B2Aug 15, 2006
Analog capacitor having at least three high-k-dielectric layers, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD35 citations92
US7002788B2Feb 21, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US7095460B2Aug 22, 2006
Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations91
US7491654B2Feb 17, 2009
Method of forming a ZrO2 thin film using plasma enhanced atomic layer deposition and method of fabricating a capacitor of a semiconductor memory device having the thin film
SAMSUNG ELECTRONICS CO LTD11 citations84
US7476922B2Jan 13, 2009
Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US7288453B2Oct 30, 2007
Method of fabricating analog capacitor using post-treatment technique
SAMSUNG ELECTRONICS CO LTD17 citations84
US7125767B2Oct 24, 2006
Capacitor including a dielectric layer having an inhomogeneous crystalline region and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7297591B2Nov 20, 2007
Method for manufacturing capacitor of semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations83
US7508649B2Mar 24, 2009
Multi-layered dielectric film of microelectronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7008837B2Mar 7, 2006
Method of manufacturing capacitor by performing multi-stepped wet treatment on surface of electrode
SAMSUNG ELECTRONICS CO LTD7 citations74
US9875791B2Jan 23, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9754660B2Sep 5, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9702041B2Jul 11, 2017
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD1 citations63
US7732296B2Jun 8, 2010
Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method
SAMSUNG ELECTRONICS CO LTD4 citations63
US7554146B2Jun 30, 2009
Metal-insulator-metal capacitor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7442982B2Oct 28, 2008
Capacitor having reaction preventing layer and methods of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7435654B2Oct 14, 2008
Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7407897B2Aug 5, 2008
Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7199003B2Apr 3, 2007
Method of manufacturing capacitor of semiconductor device by simplifying process of forming dielectric layer and apparatus therefor
SAMSUNG ELECTRONICS CO LTD3 citations62
US7615783B2Nov 10, 2009
Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US9406502B2Aug 2, 2016
Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
SAMSUNG ELECTRONICS CO LTD0 citations52
US7833580B2Nov 16, 2010
Method of forming a carbon nano-material layer using a cyclic deposition technique
SAMSUNG ELECTRONICS CO LTD1 citations52
US7679124B2Mar 16, 2010
Analog capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7563672B2Jul 21, 2009
Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
SAMSUNG ELECTRONICS CO LTD1 citations52
US7166541B2Jan 23, 2007
Method of forming dielectric layer using plasma enhanced atomic layer deposition technique
SAMSUNG ELECTRONICS CO LTD0 citations52
US7888772B2Feb 15, 2011
Electronic fuse having heat spreading structure
SAMSUNG ELECTRONICS CO LTD1 citations45
US10128254B2Nov 13, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations42