Inventor · disambiguated record
Hieu Pham
Also filed as: PHAM HIEU · PHAM HIEU T · PHAM HIEU TRUNG
26 granted patents·4 pending applications·250 citations·filing 2002–2022
96Inventor score
Files withINTERMOLECULAR INC10ADVANCED MICRO DEVICES INC8PHAM HIEU2SPANSION LLC2ADVANCED MICRO DEVICES INC AND SPANSION LLC1
Top patents by PatentIndex Score
30 records- 0195US8569104B2Transition metal oxide bilayersPHAM HIEU·Filed 2012·Granted Oct 29, 2013·27 cites·18 claims
- 0294US6746971B1Method of forming copper sulfide for memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 8, 2004·120 cites·20 claims
- 0392US8735217B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·4 cites·20 claims
- 0486US7534732B1Semiconductor devices with copper interconnects and composite silicon nitride capping layersSPANSION LLC·Filed 2006·Granted May 19, 2009·12 cites·7 claims
- 0584US8906736B1Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Dec 9, 2014·1 cites·20 claims
- 0684US8415256B1Gap-filling with uniform propertiesNICKEL ALEXANDER·Filed 2010·Granted Apr 9, 2013·9 cites·14 claims
- 0782US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 0880US8779407B2Multifunctional electrodePHAM HIEU·Filed 2012·Granted Jul 15, 2014·1 cites·19 claims
- 0979US9202758B1Method for manufacturing a contact for a semiconductor component and related structureBESSER PAUL R·Filed 2005·Granted Dec 1, 2015·9 cites·9 claims
- 1078US6875694B1Method of treating inlaid copper for improved capping layer adhesion without damaging porous low-k materialsADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 5, 2005·24 cites·20 claims
- 1177US7884030B1Gap-filling with uniform propertiesADVANCED MICRO DEVICES INC AND SPANSION LLC·Filed 2006·Granted Feb 8, 2011·7 cites·14 claims
- 1276US7307027B1Void free interlayer dielectricADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 11, 2007·5 cites·11 claims
- 1375US7985674B2SiH4 soak for low hydrogen SiN deposition to improve flash memory device performanceSPANSION LLC·Filed 2008·Granted Jul 26, 2011·4 cites·8 claims
- 1473US8859328B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Oct 14, 2014·0 cites·20 claims
- 1571US8309455B2SiH4 soak for low hydrogen SiN deposition to improve flash memory device performanceKIM SUNG JIN·Filed 2011·Granted Nov 13, 2012·2 cites·12 claims
- 1667US7217660B1Method for manufacturing a semiconductor component that inhibits formation of wormholesADVANCED MICRO DEVICES INC·Filed 2005·Granted May 15, 2007·2 cites·4 claims
- 1765US6809043B1Multi-stage, low deposition rate PECVD oxideADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 26, 2004·9 cites·17 claims
- 1863US6686232B1Ultra low deposition rate PECVD silicon nitrideADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 3, 2004·8 cites·19 claims
- 1961US8704203B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2013·Granted Apr 22, 2014·0 cites·20 claims
- 2061US8026169B2Cu annealing for improved data retention in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 27, 2011·2 cites·6 claims
- 2160US8846443B2Atomic layer deposition of metal oxides for memory applicationsHONG ZHENDONG·Filed 2011·Granted Sep 30, 2014·1 cites·19 claims
- 2257US9006026B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·17 claims
- 2356US12205061B2Shared data induced quality control for a chemical mechanical planarization processVERSUM MAT US LLC·Filed 2022·Granted Jan 21, 2025·0 cites·19 claims
- 2456US8987697B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2014·Granted Mar 24, 2015·0 cites·9 claims
- 2554US9087978B1Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2015·Granted Jul 21, 2015·0 cites·20 claims
- 2642US2008096364A1Conformal liner for gap-fillingADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 2741US2014154859A1Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 2840US8202810B2Low-H plasma treatment with N2 anneal for electronic memory devicesNICKEL ALEXANDER H·Filed 2008·Granted Jun 19, 2012·0 cites·9 claims
- 2940US2006046502A1Deposition of hard-mask with minimized hillocks and bubblesNGO MINH V·Filed 2004·Application pending·0 cites
- 3035US2017084643A1Storage Capacitors for Displays and Methods for Forming the SameINTERMOLECULAR INC·Filed 2016·Application pending·0 cites
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