Inventor
OONISHI YASUHIKO
JP24 patents
Patents
24 patentsUS9960235B2May 1, 2018
Semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US10580870B2Mar 3, 2020
Method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10439060B2Oct 8, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10418478B2Sep 17, 2019
Semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US12389639B2Aug 12, 2025
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11855134B2Dec 26, 2023
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11329151B2May 10, 2022
Insulated-gate semiconductor device and method of manufacturing the same
FUJI ELECTRIC CO LTD1 citations62
US11233124B2Jan 25, 2022
Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations61
US11239356B2Feb 1, 2022
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10692979B2Jun 23, 2020
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10396161B2Aug 27, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10840326B2Nov 17, 2020
Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material
FUJI ELECTRIC CO LTD0 citations51
US10600872B2Mar 24, 2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US10096680B2Oct 9, 2018
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations51
US10756200B2Aug 25, 2020
Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor
FUJI ELECTRIC CO LTD0 citations41
US10651270B2May 12, 2020
Semiconductor device having a trench structure
FUJI ELECTRIC CO LTD0 citations41
US10644145B2May 5, 2020
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10453954B2Oct 22, 2019
Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same
FUJI ELECTRIC CO LTD0 citations41
US10319824B2Jun 11, 2019
Semiconductor device includes a substrate having a bandgap wider than that of silicon and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10319820B2Jun 11, 2019
Semiconductor device having silicon carbide layer provided on silicon carbide substrate
FUJI ELECTRIC CO LTD0 citations41
US10204990B2Feb 12, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10147791B2Dec 4, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10069004B2Sep 4, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations41
US10304930B2May 28, 2019
Semiconductor device implanted with arsenic and nitrogen
FUJI ELECTRIC CO LTD0 citations40