Inventor

AN FENG-YUAN

TW2 patents

Patents

2 patents

US7045876B2May 16, 2006

Amorphizing ion implant method for forming polysilicon emitter bipolar transistor

TAIWAN SEMICONDUCTOR MFG2 citations55

US6740563B1May 25, 2004

Amorphizing ion implant method for forming polysilicon emitter bipolar transistor

TAIWAN SEMICONDUCTOR MFG0 citations44