Inventor

ZELTSER ALEXANDER M

US39 patents

⚠️ This page may combine multiple inventors who share the name “ZELTSER ALEXANDER M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZELTSER ALEXANDER M

WESTERN DIGITAL TECH INC

Areal density capability improvement with spin-orbit torque based structures surrounding main pole tip

Areal density capability improvement with a main pole skin

Areal density capability improvement with a main pole skin

Areal density capability improvement with a main pole skin

MAMR write head with thermal dissipation conductive guide

Anisotropy field induced self pinned recessed antiferromagnetic reader

TMR sensor with magnetic tunnel junctions with a free layer having an intrinsic anisotropy

Areal density capability improvement with a main pole skin

Areal density capability improvement with a main pole skin

MAMR write head with thermal dissipation conductive guide

HGST Netherlands BV

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and improved center shield

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with multiple stacked sensors and center shield with CoFeB insertion layer

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with exchange-coupled side shield structure

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with side shields and an antiparallel structure top shield

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor having a top shield with an antiparallel structure

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with hard magnet biasing structure having a MgO insulating layer

Perpendicular magnetic recording write head with main pole formed on a metallic amorphous underlayer

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved seed layer structure for hard bias layer

Partial main pole lamination for pole erasure improvement

HITACHI GLOBAL STORAGE TECH

Dual-layer free layer in a tunneling magnetoresistance (TMR) element

Tunneling magnetoresistive sensor having a high iron concentration free layer and an oxides of magnesium barrier layer

Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers

Method of making a magnetic sensing device having an insulator structure

Magnetic head spin valve structure with CoFeCu magnetic layer and ZnOx/TaOx cap layer

Pinned layer in magnetoresistive sensor

Method and apparatus having improved magnetic read head sensors

Enhanced spin-valve sensor with engineered overlayer formed on a free layer

Method of manufacturing enhanced spin-valve sensor with engineered overlayer

ZELTSER ALEXANDER M

Perpendicular magnetic recording write head with antiparallel-coupled laminated main pole having a tapered trailing edge

Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with improved hard magnet biasing structure

Perpendicular magnetic recording write head with improved laminated main pole

TMR sensor with a multilayered reference layer

LEE WEN-YAUNG

Magnetoresistive sensor with novel pinned layer structure

Magnetoresistive sensor with sub-layering of pinned layers

EASTMAN KODAK CO

Ferhgasi soft magnetic materials for inductive magnetic heads

Electrical print head for thermal printer

HITACHI GLOBAL STORAGE TECH NL

Tunnel magnetoresistance (TMR) structures with MGO barrier and methods of making same

HITACHI GLOBAL TECH NL BV

Depositing a pinned layer structure in a self-pinned spin valve

CHILDRESS JEFFREY R

Write head pole laminate structure