P

Inventor

KHALIL IBRAHIM

US35 patents
⚠️ This page may combine multiple inventors who share the name “KHALIL IBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NXP USA INC

21 patents
US10147686B1Dec 4, 2018

Transistor with shield structure, packaged device, and method of manufacture

NXP USA INC11 citations81
US10103233B1Oct 16, 2018

Transistor die with drain via arrangement, and methods of manufacture thereof

NXP USA INC11 citations78
US12327778B2Jun 10, 2025

Transistor die with primary and ancillary transistor elements

NXP USA INC2 citations73
US11444044B2Sep 13, 2022

Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies

NXP USA INC2 citations73
US11121072B1Sep 14, 2021

Semiconductor device with isolation structure

NXP USA INC3 citations73
US11430874B2Aug 30, 2022

Semiconductor device with a crossing region

NXP USA INC4 citations72
US10593619B1Mar 17, 2020

Transistor shield structure, packaged device, and method of manufacture

NXP USA INC5 citations71
US11502026B2Nov 15, 2022

Transistor with flip-chip topology and power amplifier containing same

NXP USA INC2 citations66
US12159845B2Dec 3, 2024

Transistor with integrated passive components

NXP USA INC0 citations62
US11842957B2Dec 12, 2023

Amplifier modules and systems with ground terminals adjacent to power amplifier die

NXP USA INC1 citations62
US11387169B2Jul 12, 2022

Transistor with I/O ports in an active area of the transistor

NXP USA INC0 citations62
US12119300B2Oct 15, 2024

Transistor circuits with shielded reference transistors

NXP USA INC1 citations59
US12599008B2Apr 7, 2026

Transistor with source manifold in non-active die region

NXP USA INC0 citations51
US12349433B2Jul 1, 2025

Transistors with self-aligned source-connected field plates

NXP USA INC0 citations51
US12191383B2Jan 7, 2025

Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor

NXP USA INC0 citations51
US10826439B2Nov 3, 2020

Linearity enhancement of high power amplifiers

NXP USA INC0 citations51
US11804527B2Oct 31, 2023

Transistor with center fed gate

NXP USA INC0 citations50
US11302609B2Apr 12, 2022

Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same

NXP USA INC0 citations50
US11108361B2Aug 31, 2021

Integrated multiple-path power amplifier with interdigitated transistors

NXP USA INC0 citations49
US11430743B1Aug 30, 2022

Transistor with shield system including multilayer shield structure arrangement

NXP USA INC0 citations48
US10615510B1Apr 7, 2020

Feed structure, electrical component including the feed structure, and module

NXP USA INC0 citations48

FILTRAN LLC

5 patents

SPX CORP

4 patents

FREESCALE SEMICONDUCTOR INC

2 patents

NXP BV

2 patents

KHALIL IBRAHIM

1 patent