Inventor
KHALIL IBRAHIM
US35 patents
⚠️ This page may combine multiple inventors who share the name “KHALIL IBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP USA INC
21 patentsUS10147686B1Dec 4, 2018
Transistor with shield structure, packaged device, and method of manufacture
NXP USA INC11 citations81
US10103233B1Oct 16, 2018
Transistor die with drain via arrangement, and methods of manufacture thereof
NXP USA INC11 citations78
US12327778B2Jun 10, 2025
Transistor die with primary and ancillary transistor elements
NXP USA INC2 citations73
US11444044B2Sep 13, 2022
Transistor die with output bondpad at the input side of the die, and power amplifiers including such dies
NXP USA INC2 citations73
US11121072B1Sep 14, 2021
Semiconductor device with isolation structure
NXP USA INC3 citations73
US11430874B2Aug 30, 2022
Semiconductor device with a crossing region
NXP USA INC4 citations72
US10593619B1Mar 17, 2020
Transistor shield structure, packaged device, and method of manufacture
NXP USA INC5 citations71
US11502026B2Nov 15, 2022
Transistor with flip-chip topology and power amplifier containing same
NXP USA INC2 citations66
US12159845B2Dec 3, 2024
Transistor with integrated passive components
NXP USA INC0 citations62
US11842957B2Dec 12, 2023
Amplifier modules and systems with ground terminals adjacent to power amplifier die
NXP USA INC1 citations62
US11387169B2Jul 12, 2022
Transistor with I/O ports in an active area of the transistor
NXP USA INC0 citations62
US12119300B2Oct 15, 2024
Transistor circuits with shielded reference transistors
NXP USA INC1 citations59
US12599008B2Apr 7, 2026
Transistor with source manifold in non-active die region
NXP USA INC0 citations51
US12349433B2Jul 1, 2025
Transistors with self-aligned source-connected field plates
NXP USA INC0 citations51
US12191383B2Jan 7, 2025
Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor
NXP USA INC0 citations51
US10826439B2Nov 3, 2020
Linearity enhancement of high power amplifiers
NXP USA INC0 citations51
US11804527B2Oct 31, 2023
Transistor with center fed gate
NXP USA INC0 citations50
US11302609B2Apr 12, 2022
Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same
NXP USA INC0 citations50
US11108361B2Aug 31, 2021
Integrated multiple-path power amplifier with interdigitated transistors
NXP USA INC0 citations49
US11430743B1Aug 30, 2022
Transistor with shield system including multilayer shield structure arrangement
NXP USA INC0 citations48
US10615510B1Apr 7, 2020
Feed structure, electrical component including the feed structure, and module
NXP USA INC0 citations48
FILTRAN LLC
5 patentsUS10086318B2Oct 2, 2018
Filter with internal frame openings
FILTRAN LLC5 citations69
US8052867B2Nov 8, 2011
Dual media fluid filter
FILTRAN LLC6 citations69
US10012118B2Jul 3, 2018
Filter with dual pleat pack
FILTRAN LLC3 citations67
US11826682B2Nov 28, 2023
Flow control elements and fluid apparatus including the same
FILTRAN LLC0 citations55
US10130903B2Nov 20, 2018
Filter with dual pleat pack
FILTRAN LLC1 citations48
SPX CORP
4 patentsFREESCALE SEMICONDUCTOR INC
2 patentsUS9653410B1May 16, 2017
Transistor with shield structure, packaged device, and method of manufacture
FREESCALE SEMICONDUCTOR INC43 citations88
US9800213B1Oct 24, 2017
Amplifier devices with impedance matching networks that incorporate a capacitor integrated with a bond pad
FREESCALE SEMICONDUCTOR INC10 citations82
NXP BV
2 patentsUS12336254B2Jun 17, 2025
Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
NXP BV0 citations61
US11923424B2Mar 5, 2024
Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor
NXP BV0 citations61