Inventor
SUN YONGSHUN
SG22 patents
Patents
22 patentsUS10424616B1Sep 24, 2019
Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same
GLOBALFOUNDRIES SG PTE LTD6 citations72
US12510612B2Dec 30, 2025
Current sensor for printed circuit board
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11821924B2Nov 21, 2023
On-chip current sensor
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11810982B2Nov 7, 2023
Nonvolatile memory device with a doped region between a source and a drain and integration schemes
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11515314B2Nov 29, 2022
One transistor two capacitors nonvolatile memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11500041B2Nov 15, 2022
Hall effect sensors
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11495608B2Nov 8, 2022
Multi-finger gate nonvolatile memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11450677B2Sep 20, 2022
Partially silicided nonvolatile memory devices and integration schemes
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11437392B2Sep 6, 2022
Compact memory cell with a shared conductive select gate and methods of making such a memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11139311B2Oct 5, 2021
Semiconductor non-volatile memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations62
US11047930B2Jun 29, 2021
Hall effect sensors with tunable sensitivity and/or resistance
GLOBALFOUNDRIES SG PTE LTD1 citations62
US12051761B2Jul 30, 2024
Multi-semiconductor layer photodetector and related method
GLOBALFOUNDRIES SG PTE LTD0 citations58
US11761983B2Sep 19, 2023
Probe card integrated with a hall sensor
GLOBALFOUNDRIES SG PTE LTD0 citations53
US12557563B2Feb 17, 2026
Layer stacks for a resistive memory element
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11762042B2Sep 19, 2023
Magnetic field sensor and methods of fabricating a magnetic field sensor
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11641739B2May 2, 2023
Semiconductor non-volatile memory devices
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11380703B2Jul 5, 2022
Memory structures and methods of forming memory structures
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11372061B2Jun 28, 2022
Hall effect sensor devices and methods of forming hall effect sensor devices
GLOBALFOUNDRIES SG PTE LTD0 citations52
US11309324B2Apr 19, 2022
Compact memory cell with a shared conductive word line and methods of making such a memory cell
GLOBALFOUNDRIES SG PTE LTD0 citations52
US10763427B2Sep 1, 2020
Hall element for 3-D sensing and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations51
US10211392B2Feb 19, 2019
Hall element for 3-D sensing and method for producing the same
GLOBALFOUNDRIES SG PTE LTD0 citations51
US10475803B2Nov 12, 2019
Method for making non-volatile memory device
GLOBALFOUNDRIES SG PTE LTD0 citations47