Inventor
JONKER BEREND T
US26 patents
⚠️ This page may combine multiple inventors who share the name “JONKER BEREND T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
US GOV SEC NAVY
13 patentsUS10403753B2Sep 3, 2019
Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers
US GOV SEC NAVY8 citations81
US11024447B2Jun 1, 2021
Two-dimensional materials integrated with multiferroic layers
US GOV SEC NAVY2 citations72
US11817240B2Nov 14, 2023
Two-dimensional materials integrated with multiferroic layers
US GOV SEC NAVY0 citations62
US11280856B2Mar 22, 2022
Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
US GOV SEC NAVY0 citations61
US11894449B2Feb 6, 2024
Methods for forming lateral heterojunctions in two-dimensional materials integrated with multiferroic layers
US GOV SEC NAVY0 citations60
US11862716B2Jan 2, 2024
Light-emitting devices having lateral heterojunctions in two-dimensional materials integrated with multiferroic layers
US GOV SEC NAVY0 citations60
US11476353B2Oct 18, 2022
Lateral heterojunctions in two-dimensional materials integrated with multiferroic layers
US GOV SEC NAVY0 citations60
US11156678B2Oct 26, 2021
Magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering
US GOV SEC NAVY0 citations58
US11997934B2May 28, 2024
Laser-written submicron pixels with tunable circular polarization and write-read-erase-reuse capability on a nano material or two-dimensional heterostructure at room temperature
US GOV SEC NAVY0 citations56
US10852370B2Dec 1, 2020
Direct electrical detection of current-induced spin polarization due to spin-momentum locking in topological insulators
US GOV SEC NAVY0 citations51
US11705535B2Jul 18, 2023
Nano-indent process for creating single photon emitters in a two-dimensional materials platform
US GOV SEC NAVY0 citations50
US10663773B2May 26, 2020
Optical modulator using the spin hall effect in metals
US GOV SEC NAVY0 citations48
US10686041B2Jun 16, 2020
Solid phase epitaxy of 3C-SiC on Si(001)
US GOV SEC NAVY0 citations47
US NAVY
8 patentsUS5874749AFeb 23, 1999
Polarized optical emission due to decay or recombination of spin-polarized injected carriers
US NAVY45 citations92
US6316965B1Nov 13, 2001
Non-volatile reprogrammable logic circuits by combining negative differential resistance devices and magnetic devices
US NAVY33 citations90
US4823177AApr 18, 1989
Method and device for magnetizing thin films by the use of injected spin polarized current
US NAVY38 citations90
US4828935AMay 9, 1989
Passivating layer for III-V semiconductor materials
US NAVY16 citations71
US10236365B2Mar 19, 2019
Homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
US NAVY0 citations49
US10128357B2Nov 13, 2018
Process for forming homoepitaxial tunnel barriers with hydrogenated graphene-on-graphene for room temperature electronic device applications
US NAVY0 citations49
US10261139B2Apr 16, 2019
Method of making a magnetic field sensor
US NAVY0 citations48
US10139655B2Nov 27, 2018
Method for an optical modulator using the spin hall effect in metals
US NAVY0 citations48
FRIEDMAN ADAM L
3 patentsUS9063063B2Jun 23, 2015
Low-dimensional material chemical vapor sensors
FRIEDMAN ADAM L8 citations79
US9698254B1Jul 4, 2017
Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
FRIEDMAN ADAM L2 citations68
US9614063B2Apr 4, 2017
Homoepitaxial tunnel barriers with functionalized graphene-on-graphene and methods of making
FRIEDMAN ADAM L3 citations68