P

Inventor

SON YOUNGHOON

KR31 patents
⚠️ This page may combine multiple inventors who share the name “SON YOUNGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US11594267B2Feb 28, 2023

Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US11587598B2Feb 21, 2023

Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US11789879B2Oct 17, 2023

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD1 citations72
US11782618B2Oct 10, 2023

Memory device, method of calibrating signal level thereof, and memory system having the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11693030B2Jul 4, 2023

Probe device, test device, and test method for semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023

Transmitters for generating multi-level signals and memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023

Memory package and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11348623B2May 31, 2022

Memory device, controller controlling the same, memory system including the same, and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US11615833B2Mar 28, 2023

Multi-level signal receivers and memory systems including the same

SAMSUNG ELECTRONICS CO LTD3 citations70
US12531092B2Jan 20, 2026

Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12321290B2Jun 3, 2025

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11870504B2Jan 9, 2024

Translation device, test system including the same, and memory system including the translation device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11657859B2May 23, 2023

Memory device, controller controlling the same, memory system including the same, and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations62
US11651799B2May 16, 2023

Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11581960B2Feb 14, 2023

Translation device, test system including the same, and memory system including the translation device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11574662B2Feb 7, 2023

Memory devices configured to generate pulse amplitude modulation-based DQ signals, memory controllers, and memory systems including the memory devices and the memory controllers

SAMSUNG ELECTRONICS CO LTD0 citations62
US11443785B2Sep 13, 2022

Memory device for generating data strobe signal based on pulse amplitude modulation, memory controller, and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11587609B2Feb 21, 2023

Multi-level signal receivers and memory systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations60
US12272396B2Apr 8, 2025

Method of generating a multi-level signal using selective equalization, method of transmitting data using the same, and transmitter and memory system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US11521672B2Dec 6, 2022

Semiconductor device and memory system

SAMSUNG ELECTRONICS CO LTD0 citations48
US11923042B2Mar 5, 2024

Apparatus, memory device, and method reducing clock training time

SAMSUNG ELECTRONICS CO LTD0 citations47
US12591267B2Mar 31, 2026

Apparatuses and methods for adjusting skews between data and clock

SAMSUNG ELECTRONICS CO LTD0 citations43

LG DISPLAY CO LTD

7 patents