Inventor
SON YOUNGHOON
KR31 patents
⚠️ This page may combine multiple inventors who share the name “SON YOUNGHOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
24 patentsUS11594267B2Feb 28, 2023
Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US11587598B2Feb 21, 2023
Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US11789879B2Oct 17, 2023
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11782618B2Oct 10, 2023
Memory device, method of calibrating signal level thereof, and memory system having the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11693030B2Jul 4, 2023
Probe device, test device, and test method for semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023
Transmitters for generating multi-level signals and memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023
Memory package and storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11348623B2May 31, 2022
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US11615833B2Mar 28, 2023
Multi-level signal receivers and memory systems including the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US12531092B2Jan 20, 2026
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12321290B2Jun 3, 2025
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11870504B2Jan 9, 2024
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11657859B2May 23, 2023
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US11651799B2May 16, 2023
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581960B2Feb 14, 2023
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11574662B2Feb 7, 2023
Memory devices configured to generate pulse amplitude modulation-based DQ signals, memory controllers, and memory systems including the memory devices and the memory controllers
SAMSUNG ELECTRONICS CO LTD0 citations62
US11443785B2Sep 13, 2022
Memory device for generating data strobe signal based on pulse amplitude modulation, memory controller, and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11587609B2Feb 21, 2023
Multi-level signal receivers and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12272396B2Apr 8, 2025
Method of generating a multi-level signal using selective equalization, method of transmitting data using the same, and transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US11521672B2Dec 6, 2022
Semiconductor device and memory system
SAMSUNG ELECTRONICS CO LTD0 citations48
US11923042B2Mar 5, 2024
Apparatus, memory device, and method reducing clock training time
SAMSUNG ELECTRONICS CO LTD0 citations47
US12591267B2Mar 31, 2026
Apparatuses and methods for adjusting skews between data and clock
SAMSUNG ELECTRONICS CO LTD0 citations43
LG DISPLAY CO LTD
7 patentsUS10741614B2Aug 11, 2020
Display device having a sloped insulating layer supporting an OLED array as used in eyeglasses-like augmented reality device
LG DISPLAY CO LTD2 citations72
US11997862B2May 28, 2024
Display device
LG DISPLAY CO LTD2 citations71
US11282897B2Mar 22, 2022
Display device including photo chromic material in light emitting layer
LG DISPLAY CO LTD2 citations71
US12207487B2Jan 21, 2025
Display device comprising a substrate having a first subpixel and a second subpixel and method for manufacturing the same
LG DISPLAY CO LTD0 citations62
US11917846B2Feb 27, 2024
Display device having an oxide insulating film between subpixels and method for manufacturing the same
LG DISPLAY CO LTD0 citations62
US11469390B2Oct 11, 2022
Display device and method for manufacturing the same
LG DISPLAY CO LTD0 citations62
US10996803B2May 4, 2021
Display device
LG DISPLAY CO LTD0 citations60