Inventor
CHOI YOUNGDON
KR60 patents
⚠️ This page may combine multiple inventors who share the name “CHOI YOUNGDON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
47 patentsUS11218343B2Jan 4, 2022
Memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US11742016B2Aug 29, 2023
Quadrature error correction circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US11594267B2Feb 28, 2023
Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US11699472B2Jul 11, 2023
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US11627021B2Apr 11, 2023
Data processing device and memory system including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11587598B2Feb 21, 2023
Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US12057156B2Aug 6, 2024
Quadrature error correction circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11789879B2Oct 17, 2023
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11782618B2Oct 10, 2023
Memory device, method of calibrating signal level thereof, and memory system having the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11693030B2Jul 4, 2023
Probe device, test device, and test method for semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023
Transmitters for generating multi-level signals and memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023
Memory package and storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11348623B2May 31, 2022
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US11791811B2Oct 17, 2023
Delay circuit and clock error correction device including the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11615833B2Mar 28, 2023
Multi-level signal receivers and memory systems including the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US11972831B2Apr 30, 2024
Receiver for receiving multi-level signal and memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations68
US12531092B2Jan 20, 2026
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12401353B2Aug 26, 2025
Memory device and operating method of a memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12321290B2Jun 3, 2025
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12323165B2Jun 3, 2025
Error correction device and error correction method
SAMSUNG ELECTRONICS CO LTD0 citations62
US12293801B2May 6, 2025
Memory interface and semiconductor memory device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11870504B2Jan 9, 2024
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11804838B2Oct 31, 2023
Transmitter circuit including selection circuit, and method of operating the selection circuit
SAMSUNG ELECTRONICS CO LTD1 citations62
US11736097B2Aug 22, 2023
Clock signal delay path unit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11687114B2Jun 27, 2023
Clock converting circuit with symmetric structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11657859B2May 23, 2023
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US11651799B2May 16, 2023
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581960B2Feb 14, 2023
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11574662B2Feb 7, 2023
Memory devices configured to generate pulse amplitude modulation-based DQ signals, memory controllers, and memory systems including the memory devices and the memory controllers
SAMSUNG ELECTRONICS CO LTD0 citations62
US11443785B2Sep 13, 2022
Memory device for generating data strobe signal based on pulse amplitude modulation, memory controller, and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US12518808B2Jan 6, 2026
Data converter for cancelling offset voltage
SAMSUNG ELECTRONICS CO LTD0 citations61
US12354675B2Jul 8, 2025
Nonvolatile memory device including power gating circuit and input/output circuit of a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12176926B2Dec 24, 2024
Encoding and decoding apparatuses and methods for implementing multi-mode coding
SAMSUNG ELECTRONICS CO LTD0 citations61
US12009057B2Jun 11, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11824563B2Nov 21, 2023
Encoding and decoding apparatuses and methods for implementing multi-mode coding
SAMSUNG ELECTRONICS CO LTD1 citations61
US11757567B2Sep 12, 2023
Devices and methods for encoding and decoding to implement a maximum transition avoidance coding with minimum overhead
SAMSUNG ELECTRONICS CO LTD1 citations61
US11587609B2Feb 21, 2023
Multi-level signal receivers and memory systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11545966B2Jan 3, 2023
Injection locking oscillator circuit and operating method
SAMSUNG ELECTRONICS CO LTD0 citations60
US12548604B2Feb 10, 2026
Receiver, operation method thereof, and memory device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12405851B2Sep 2, 2025
Electronic devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12387798B2Aug 12, 2025
Nonvolatile memory device providing input/output compatibility and method for setting compatibility thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US12340868B2Jun 24, 2025
Semiconductor device and method for preforming emphasis driving
SAMSUNG ELECTRONICS CO LTD0 citations59
US12080379B2Sep 3, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11501846B2Nov 15, 2022
Semiconductor memory device, method of testing the same and test system
SAMSUNG ELECTRONICS CO LTD1 citations57
US12556191B2Feb 17, 2026
Analog-to-digital conversion
SAMSUNG ELECTRONICS CO LTD0 citations52
LG ELECTRONICS INC
2 patentsCHOI YOUNGDON
1 patentShowing the top 50 of 60 patents by PatentIndex Score.