Inventor
CHOI JUNGHWAN
KR91 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUNGHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
48 patentsUS10255969B2Apr 9, 2019
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD44 citations96
US11218343B2Jan 4, 2022
Memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US11742016B2Aug 29, 2023
Quadrature error correction circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD6 citations83
US10062430B2Aug 28, 2018
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD4 citations82
US9899075B2Feb 20, 2018
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD5 citations82
US11594267B2Feb 28, 2023
Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same
SAMSUNG ELECTRONICS CO LTD5 citations74
US11699472B2Jul 11, 2023
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US11627021B2Apr 11, 2023
Data processing device and memory system including the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11587598B2Feb 21, 2023
Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US12057156B2Aug 6, 2024
Quadrature error correction circuit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11888654B2Jan 30, 2024
Offset detector circuit for differential signal generator, receiver, and method of compensating for offset of differential signal generator
SAMSUNG ELECTRONICS CO LTD3 citations72
US11789879B2Oct 17, 2023
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11782618B2Oct 10, 2023
Memory device, method of calibrating signal level thereof, and memory system having the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11693030B2Jul 4, 2023
Probe device, test device, and test method for semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023
Transmitters for generating multi-level signals and memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023
Memory package and storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11467148B2Oct 11, 2022
Method and apparatus for analyzing communication environments and designing networks in consideration of trees
SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11348623B2May 31, 2022
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US11240676B2Feb 1, 2022
Analysis method and apparatus for distributed-processing-based network design in wireless communication system
SAMSUNG ELECTRONICS CO LTD2 citations72
US11791811B2Oct 17, 2023
Delay circuit and clock error correction device including the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US11615833B2Mar 28, 2023
Multi-level signal receivers and memory systems including the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US12063044B2Aug 13, 2024
Digital phase locked loop and methods of operating same
SAMSUNG ELECTRONICS CO LTD4 citations69
US11940830B2Mar 26, 2024
Low dropout regulator and memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US11972831B2Apr 30, 2024
Receiver for receiving multi-level signal and memory device including the same
SAMSUNG ELECTRONICS CO LTD2 citations68
US10908840B2Feb 2, 2021
Semiconductor memory module including nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations63
US12531092B2Jan 20, 2026
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12401353B2Aug 26, 2025
Memory device and operating method of a memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12321290B2Jun 3, 2025
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12293801B2May 6, 2025
Memory interface and semiconductor memory device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024
Memory device supporting a high-efficient input/output interface and a memory system including the memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11870504B2Jan 9, 2024
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11804838B2Oct 31, 2023
Transmitter circuit including selection circuit, and method of operating the selection circuit
SAMSUNG ELECTRONICS CO LTD1 citations62
US11736097B2Aug 22, 2023
Clock signal delay path unit and semiconductor memory device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11687114B2Jun 27, 2023
Clock converting circuit with symmetric structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11657859B2May 23, 2023
Memory device, controller controlling the same, memory system including the same, and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US11651799B2May 16, 2023
Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11581960B2Feb 14, 2023
Translation device, test system including the same, and memory system including the translation device
SAMSUNG ELECTRONICS CO LTD1 citations62
US11574662B2Feb 7, 2023
Memory devices configured to generate pulse amplitude modulation-based DQ signals, memory controllers, and memory systems including the memory devices and the memory controllers
SAMSUNG ELECTRONICS CO LTD0 citations62
US11443785B2Sep 13, 2022
Memory device for generating data strobe signal based on pulse amplitude modulation, memory controller, and memory system including the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US12518808B2Jan 6, 2026
Data converter for cancelling offset voltage
SAMSUNG ELECTRONICS CO LTD0 citations61
US12354675B2Jul 8, 2025
Nonvolatile memory device including power gating circuit and input/output circuit of a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12176926B2Dec 24, 2024
Encoding and decoding apparatuses and methods for implementing multi-mode coding
SAMSUNG ELECTRONICS CO LTD0 citations61
US12009057B2Jun 11, 2024
Semiconductor memory device and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11942968B2Mar 26, 2024
Transmitter and receiver for 3-level pulse amplitude modulation signaling and system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11824563B2Nov 21, 2023
Encoding and decoding apparatuses and methods for implementing multi-mode coding
SAMSUNG ELECTRONICS CO LTD1 citations61
US11721391B2Aug 8, 2023
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
US11443794B2Sep 13, 2022
Multi channel semiconductor device having multi dies and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations61
HYUN SEOKHUN
1 patentKIM JEONG-KYOUM
1 patentShowing the top 50 of 91 patents by PatentIndex Score.