P

Inventor

CHOI JUNGHWAN

KR91 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUNGHWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

48 patents
US10255969B2Apr 9, 2019

Multi channel semiconductor device having multi dies and operation method thereof

SAMSUNG ELECTRONICS CO LTD44 citations96
US11218343B2Jan 4, 2022

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD5 citations84
US11742016B2Aug 29, 2023

Quadrature error correction circuit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD6 citations83
US10062430B2Aug 28, 2018

Multi channel semiconductor device having multi dies and operation method thereof

SAMSUNG ELECTRONICS CO LTD4 citations82
US9899075B2Feb 20, 2018

Multi channel semiconductor device having multi dies and operation method thereof

SAMSUNG ELECTRONICS CO LTD5 citations82
US11594267B2Feb 28, 2023

Memory device for receiving one clock signal as a multi-level signal and restoring original data encoded into the clock signal and method of operating the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US11699472B2Jul 11, 2023

Semiconductor memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US11627021B2Apr 11, 2023

Data processing device and memory system including the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US11587598B2Feb 21, 2023

Memory device for generating pulse amplitude modulation-based DQ signal and memory system including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US12057156B2Aug 6, 2024

Quadrature error correction circuit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11888654B2Jan 30, 2024

Offset detector circuit for differential signal generator, receiver, and method of compensating for offset of differential signal generator

SAMSUNG ELECTRONICS CO LTD3 citations72
US11789879B2Oct 17, 2023

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD1 citations72
US11782618B2Oct 10, 2023

Memory device, method of calibrating signal level thereof, and memory system having the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11693030B2Jul 4, 2023

Probe device, test device, and test method for semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US11669448B2Jun 6, 2023

Transmitters for generating multi-level signals and memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11657860B2May 23, 2023

Memory package and storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US11467148B2Oct 11, 2022

Method and apparatus for analyzing communication environments and designing networks in consideration of trees

SAMSUNG ELECTRONICS CO LTD2 citations72
US11461251B2Oct 4, 2022

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11348623B2May 31, 2022

Memory device, controller controlling the same, memory system including the same, and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US11240676B2Feb 1, 2022

Analysis method and apparatus for distributed-processing-based network design in wireless communication system

SAMSUNG ELECTRONICS CO LTD2 citations72
US11791811B2Oct 17, 2023

Delay circuit and clock error correction device including the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US11615833B2Mar 28, 2023

Multi-level signal receivers and memory systems including the same

SAMSUNG ELECTRONICS CO LTD3 citations70
US12063044B2Aug 13, 2024

Digital phase locked loop and methods of operating same

SAMSUNG ELECTRONICS CO LTD4 citations69
US11940830B2Mar 26, 2024

Low dropout regulator and memory device including the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US11972831B2Apr 30, 2024

Receiver for receiving multi-level signal and memory device including the same

SAMSUNG ELECTRONICS CO LTD2 citations68
US10908840B2Feb 2, 2021

Semiconductor memory module including nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD0 citations63
US12531092B2Jan 20, 2026

Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12401353B2Aug 26, 2025

Memory device and operating method of a memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12321290B2Jun 3, 2025

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12293801B2May 6, 2025

Memory interface and semiconductor memory device and semiconductor device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12061561B2Aug 13, 2024

Memory device supporting a high-efficient input/output interface and a memory system including the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11870504B2Jan 9, 2024

Translation device, test system including the same, and memory system including the translation device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11804838B2Oct 31, 2023

Transmitter circuit including selection circuit, and method of operating the selection circuit

SAMSUNG ELECTRONICS CO LTD1 citations62
US11736097B2Aug 22, 2023

Clock signal delay path unit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11687114B2Jun 27, 2023

Clock converting circuit with symmetric structure

SAMSUNG ELECTRONICS CO LTD0 citations62
US11657859B2May 23, 2023

Memory device, controller controlling the same, memory system including the same, and operating method thereof

SAMSUNG ELECTRONICS CO LTD1 citations62
US11651799B2May 16, 2023

Method of generating a multi-level signal using a selective level change, a method of transmitting data using the same, and a transmitter and memory system performing the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11581960B2Feb 14, 2023

Translation device, test system including the same, and memory system including the translation device

SAMSUNG ELECTRONICS CO LTD1 citations62
US11574662B2Feb 7, 2023

Memory devices configured to generate pulse amplitude modulation-based DQ signals, memory controllers, and memory systems including the memory devices and the memory controllers

SAMSUNG ELECTRONICS CO LTD0 citations62
US11443785B2Sep 13, 2022

Memory device for generating data strobe signal based on pulse amplitude modulation, memory controller, and memory system including the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US12518808B2Jan 6, 2026

Data converter for cancelling offset voltage

SAMSUNG ELECTRONICS CO LTD0 citations61
US12354675B2Jul 8, 2025

Nonvolatile memory device including power gating circuit and input/output circuit of a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US12176926B2Dec 24, 2024

Encoding and decoding apparatuses and methods for implementing multi-mode coding

SAMSUNG ELECTRONICS CO LTD0 citations61
US12009057B2Jun 11, 2024

Semiconductor memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11942968B2Mar 26, 2024

Transmitter and receiver for 3-level pulse amplitude modulation signaling and system including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11824563B2Nov 21, 2023

Encoding and decoding apparatuses and methods for implementing multi-mode coding

SAMSUNG ELECTRONICS CO LTD1 citations61
US11721391B2Aug 8, 2023

Multi channel semiconductor device having multi dies and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations61
US11443794B2Sep 13, 2022

Multi channel semiconductor device having multi dies and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations61

HYUN SEOKHUN

1 patent

KIM JEONG-KYOUM

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.