Inventor · disambiguated record
Mark Bossler
Also filed as: BOSSLER MARK · BOSSLER MARK A
6 granted patents·3 pending applications·38 citations·filing 2001–2021
81Inventor score
Files withMICRON TECHNOLOGY INC8
Top patents by PatentIndex Score
9 records- 0182US9318438B2Semiconductor structures comprising at least one through-substrate via filled with conductive materialsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 19, 2016·4 cites·20 claims
- 0279US9780052B2Collars for under-bump metal structures and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 3, 2017·3 cites·24 claims
- 0368US6762125B1Modified facet etch to prevent blown gate oxide and increase etch chamber lifeMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 13, 2004·13 cites·21 claims
- 0463US6727158B2Structure and method for forming a faceted opening and a layer filling thereinMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 27, 2004·15 cites·21 claims
- 0562US9034769B2Methods of selectively removing a substrate materialMICRON TECHNOLOGY INC·Filed 2012·Granted May 19, 2015·1 cites·15 claims
- 0662US2021151400A1Collars for under-bump metal structures and associated systems and methodsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 0749US2007278611A1Modified Facet Etch to Prevent Blown Gate Oxide and Increase Etch Chamber LifeMICRON TECHNOLOGY INC·Filed 2007·Application pending·0 cites
- 0846US7262136B2Modified facet etch to prevent blown gate oxide and increase etch chamber lifeMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 28, 2007·2 cites·43 claims
- 0929US2004046229A1Structure and method for forming a faceted opening and layer filling thereinFiled 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →