P

Inventor

PARK BEOMJIN

KR17 patents

Patents

17 patents
US12132101B2Oct 29, 2024

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US11810964B2Nov 7, 2023

Semiconductor devices including gate spacer

SAMSUNG ELECTRONICS CO LTD3 citations69
US11699703B2Jul 11, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11171133B2Nov 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations61
US12444697B2Oct 14, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12310079B2May 20, 2025

Semiconductor devices including gate spacer

SAMSUNG ELECTRONICS CO LTD0 citations59
US11961806B2Apr 16, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12575135B2Mar 10, 2026

Semiconductor devices including gate-all-around type field effect transistor

SAMSUNG ELECTRONICS CO LTD0 citations55
US12446277B2Oct 14, 2025

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US12432973B2Sep 30, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US12426308B2Sep 23, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12132046B2Oct 29, 2024

Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12598751B2Apr 7, 2026

Semiconductor devices and data storage systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US12532524B2Jan 20, 2026

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations50
US12543345B2Feb 3, 2026

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US11935924B2Mar 19, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations47
US12237391B2Feb 25, 2025

Semiconductor device including a field effect transistor and a method of fabricating the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations46