Inventor
BAE DONG IL
KR72 patents
Patents
50 patentsUS10243040B1Mar 26, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD38 citations94
US9929235B1Mar 27, 2018
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations94
US9412849B1Aug 9, 2016
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD25 citations94
US7119389B2Oct 10, 2006
Dynamic random access memory cells having laterally offset storage nodes
SAMSUNG ELECTRONICS CO LTD16 citations92
US6730956B2May 4, 2004
Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method
SAMSUNG ELECTRONICS CO LTD21 citations92
US10872983B2Dec 22, 2020
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US10629740B2Apr 21, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US10431585B2Oct 1, 2019
Semiconductor devices with multi-gate structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US10181510B2Jan 15, 2019
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10128379B2Nov 13, 2018
Semiconductor device having channel regions
SAMSUNG ELECTRONICS CO LTD14 citations84
US9972720B2May 15, 2018
Semiconductor device having a planar insulating layer
SAMSUNG ELECTRONICS CO LTD14 citations84
US9443978B2Sep 13, 2016
Semiconductor device having gate-all-around transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US10749030B2Aug 18, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations83
US10937787B2Mar 2, 2021
Semiconductor devices having different numbers of stacked channels in different regions and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations81
US9525036B2Dec 20, 2016
Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess
SAMSUNG ELECTRONICS CO LTD8 citations81
US7504295B2Mar 17, 2009
Methods for fabricating dynamic random access memory cells having laterally offset storage nodes
SAMSUNG ELECTRONICS CO LTD6 citations74
US11894379B2Feb 6, 2024
Semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11735629B2Aug 22, 2023
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11393929B2Jul 19, 2022
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD4 citations73
US11367723B2Jun 21, 2022
Semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11309421B2Apr 19, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11222949B2Jan 11, 2022
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11164943B2Nov 2, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11133383B2Sep 28, 2021
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11094800B2Aug 17, 2021
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11024628B2Jun 1, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD5 citations73
US10978299B2Apr 13, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD5 citations73
US10903324B2Jan 26, 2021
Semiconductor device including fin-FET and etch stop layers
SAMSUNG ELECTRONICS CO LTD3 citations73
US10784344B2Sep 22, 2020
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10756179B2Aug 25, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10090328B2Oct 2, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9905559B2Feb 27, 2018
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US9735153B2Aug 15, 2017
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11211495B2Dec 28, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations72
US10714617B2Jul 14, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations72
US12119351B2Oct 15, 2024
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US11177260B2Nov 16, 2021
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations63
US7864595B2Jan 4, 2011
Nonvolatile memory cell, nonvolatile memory device, and method of programming the nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US12382653B2Aug 5, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12300751B2May 13, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12199099B2Jan 14, 2025
Semiconductor devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11923456B2Mar 5, 2024
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11908952B2Feb 20, 2024
Semiconductor devices and manufacturing methods thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11784256B2Oct 10, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11742411B2Aug 29, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11715786B2Aug 1, 2023
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11710741B2Jul 25, 2023
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11699728B2Jul 11, 2023
Semiconductor device including fin-FET and misaligned source and drain contacts
SAMSUNG ELECTRONICS CO LTD0 citations62
US11640973B2May 2, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11637205B2Apr 25, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
Showing the top 50 of 72 patents by PatentIndex Score.