Inventor
KIM WANDON
KR49 patents
Patents
49 patentsUS10784260B2Sep 22, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US8343844B2Jan 1, 2013
Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby
SAMSUNG ELECTRONICS CO LTD11 citations83
US9093460B2Jul 28, 2015
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations81
US11296078B2Apr 5, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US11955487B2Apr 9, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations72
US11804530B2Oct 31, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11417656B2Aug 16, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11239334B2Feb 1, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US9991357B2Jun 5, 2018
Semiconductor devices with gate electrodes on separate sets of high-k dielectric layers
SAMSUNG ELECTRONICS CO LTD4 citations72
US11888063B2Jan 30, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US11631769B2Apr 18, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11411106B2Aug 9, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US11387236B2Jul 12, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations71
US11145738B2Oct 12, 2021
Semiconductor devices having multiple barrier patterns
SAMSUNG ELECTRONICS CO LTD3 citations71
US10985275B2Apr 20, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations71
US11094586B2Aug 17, 2021
Semiconductor device including interconnections having different structures and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations69
US9627509B2Apr 18, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations69
US12199163B2Jan 14, 2025
Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrode
SAMSUNG ELECTRONICS CO LTD0 citations62
US12183742B2Dec 31, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12080712B2Sep 3, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11948994B2Apr 2, 2024
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11682706B2Jun 20, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11217677B2Jan 4, 2022
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12062661B2Aug 13, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11837645B2Dec 5, 2023
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11830874B2Nov 28, 2023
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11557656B2Jan 17, 2023
Semiconductor device having a capping pattern on a gate electrode
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538916B2Dec 27, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11233050B2Jan 25, 2022
Semiconductor device with diffusion barrier in the active contact
SAMSUNG ELECTRONICS CO LTD0 citations61
US12550333B2Feb 10, 2026
Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12451421B2Oct 21, 2025
Semiconductor device with double etch stop layer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US12419086B2Sep 16, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12218046B2Feb 4, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11778835B2Oct 3, 2023
Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations60
US11664310B2May 30, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11610975B2Mar 21, 2023
Semiconductor devices having multiple barrier patterns
SAMSUNG ELECTRONICS CO LTD0 citations60
US11335701B2May 17, 2022
Semiconductor switching devices having ferroelectric layers therein and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12354943B2Jul 8, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11929366B2Mar 12, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11374001B2Jun 28, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations59
US11955523B2Apr 9, 2024
Semiconductor device including a gate structure
SAMSUNG ELECTRONICS CO LTD0 citations58
US11594604B2Feb 28, 2023
Semiconductor device including a gate structure
SAMSUNG ELECTRONICS CO LTD0 citations58
US12243815B2Mar 4, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10811505B2Oct 20, 2020
Gate electrode having upper and lower capping patterns
SAMSUNG ELECTRONICS CO LTD0 citations51
US12230682B2Feb 18, 2025
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations50
US10950709B2Mar 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12021027B2Jun 25, 2024
Integrated circuit device having parallel conductive lines with bulging end portion(s) and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US12444675B2Oct 14, 2025
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations47
US12262558B2Mar 25, 2025
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations47