Inventor
YIM JEONGHYUK
KR16 patents
Patents
16 patentsUS10784260B2Sep 22, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD7 citations84
US12356665B2Jul 8, 2025
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US12170322B2Dec 17, 2024
Devices including stacked nanosheet transistors
SAMSUNG ELECTRONICS CO LTD2 citations72
US11769728B2Sep 26, 2023
Backside power distribution network semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11094586B2Aug 17, 2021
Semiconductor device including interconnections having different structures and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations69
US12464803B2Nov 4, 2025
Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip
SAMSUNG ELECTRONICS CO LTD0 citations62
US12310062B2May 20, 2025
Integrated circuit devices including stacked transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11901240B2Feb 13, 2024
Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chip
SAMSUNG ELECTRONICS CO LTD0 citations62
US12262560B2Mar 25, 2025
Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11923365B2Mar 5, 2024
Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11557656B2Jan 17, 2023
Semiconductor device having a capping pattern on a gate electrode
SAMSUNG ELECTRONICS CO LTD0 citations61
US12419086B2Sep 16, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12142564B2Nov 12, 2024
Backside power distribution network semiconductor package and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US10811505B2Oct 20, 2020
Gate electrode having upper and lower capping patterns
SAMSUNG ELECTRONICS CO LTD0 citations51
US10950709B2Mar 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12588489B2Mar 24, 2026
Integrated circuit devices including stacked elements and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations47