Inventor
LIAO HSIANG-JU
TW2 patents
Patents
2 patentsUS12484274B2Nov 25, 2025
Techniques for semiconductor gate and contact formation to reduce seam formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12464773B2Nov 4, 2025
Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59