P

Inventor

LEE SEUNG HWAN

KR292 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US6468924B2Oct 22, 2002

Methods of forming thin films by atomic layer deposition

SAMSUNG ELECTRONICS CO LTD930 citations99
US6391803B1May 21, 2002

Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane

SAMSUNG ELECTRONICS CO LTD964 citations99
US7361563B2Apr 22, 2008

Methods of fabricating a semiconductor device using a selective epitaxial growth technique

SAMSUNG ELECTRONICS CO LTD94 citations98
US6933245B2Aug 23, 2005

Method of forming a thin film with a low hydrogen content on a semiconductor device

SAMSUNG ELECTRONICS CO LTD74 citations98
US6893915B2May 17, 2005

Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD84 citations98
US6828218B2Dec 7, 2004

Method of forming a thin film using atomic layer deposition

SAMSUNG ELECTRONICS CO LTD96 citations98
US7385247B2Jun 10, 2008

At least penta-sided-channel type of FinFET transistor

SAMSUNG ELECTRONICS CO LTD46 citations96
US6218260B1Apr 17, 2001

Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby

SAMSUNG ELECTRONICS CO LTD76 citations95
US9521983B2Dec 20, 2016

X-ray apparatus

SAMSUNG ELECTRONICS CO LTD27 citations93
US7671420B2Mar 2, 2010

Semiconductor devices having faceted channels and methods of fabricating such devices

SAMSUNG ELECTRONICS CO LTD28 citations92
US7646056B2Jan 12, 2010

Gate structures of a non-volatile memory device and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD39 citations92
US7561636B2Jul 14, 2009

Digital predistortion apparatus and method in power amplifier

SAMSUNG ELECTRONICS CO LTD20 citations92
US7529571B2May 5, 2009

Sliding/hinge apparatus for sliding/rotating type mobile terminals

SAMSUNG ELECTRONICS CO LTD50 citations92
US7354835B2Apr 8, 2008

Method of fabricating CMOS transistor and CMOS transistor fabricated thereby

SAMSUNG ELECTRONICS CO LTD26 citations92
US7033895B2Apr 25, 2006

Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process

SAMSUNG ELECTRONICS CO LTD22 citations92
US6599807B2Jul 29, 2003

Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics

SAMSUNG ELECTRONICS CO LTD33 citations92
US9438801B2Sep 6, 2016

Camera module having a moving frame

SAMSUNG ELECTRONICS CO LTD22 citations90
US9269775B2Feb 23, 2016

Tunneling devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD30 citations90
US7723193B2May 25, 2010

Method of forming an at least penta-sided-channel type of FinFET transistor

SAMSUNG ELECTRONICS CO LTD13 citations84
US7601983B2Oct 13, 2009

Transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7517750B2Apr 14, 2009

Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7510931B2Mar 31, 2009

Method of fabricating a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7354821B2Apr 8, 2008

Methods of fabricating trench capacitors with insulating layer collars in undercut regions

SAMSUNG ELECTRONICS CO LTD10 citations84
US7144771B2Dec 5, 2006

Methods of forming electronic devices including dielectric layers with different densities of titanium

SAMSUNG ELECTRONICS CO LTD12 citations84
US6448146B1Sep 10, 2002

Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes

SAMSUNG ELECTRONICS CO LTD17 citations84
US6077573AJun 20, 2000

Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layers

SAMSUNG ELECTRONICS CO LTD18 citations84
US10076290B2Sep 18, 2018

X-ray imaging apparatus and control method for the same

SAMSUNG ELECTRONICS CO LTD8 citations82
US9832383B2Nov 28, 2017

Camera module having a moving frame

SAMSUNG ELECTRONICS CO LTD9 citations82
US9949702B2Apr 24, 2018

X-ray grid structure and X-ray apparatus including the same

SAMSUNG ELECTRONICS CO LTD8 citations79
US7611973B2Nov 3, 2009

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7094712B2Aug 22, 2006

High performance MIS capacitor with HfO2 dielectric

SAMSUNG ELECTRONICS CO LTD10 citations74
US6833310B2Dec 21, 2004

Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations74

HYUNDAI MOBIS CO LTD

3 patents

KIA MOTORS CORP

2 patents

HYUNDAI MOTOR CO LTD

2 patents

LG ELECTRONICS INC

1 patent

ASM IP HOLDING BV

1 patent

KOREA INST SCI & TECH

1 patent

KOREA ELECTRONICS TELECOMM

1 patent

HYUNDAI ELECTRONICS IND

1 patent

PARK IN KIL

1 patent

SK HYNIX INC

1 patent

LEE SEUNG MOK

1 patent

MAGNACHIP SEMICONDUCTOR LTD

1 patent

BYUN CHANG-HEUM

1 patent

LG INF & COMM LTD

1 patent

Showing the top 50 of 292 patents by PatentIndex Score.