Inventor
LEE SEUNG HWAN
KR292 patents
⚠️ This page may combine multiple inventors who share the name “LEE SEUNG HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS6468924B2Oct 22, 2002
Methods of forming thin films by atomic layer deposition
SAMSUNG ELECTRONICS CO LTD930 citations99
US6391803B1May 21, 2002
Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
SAMSUNG ELECTRONICS CO LTD964 citations99
US7361563B2Apr 22, 2008
Methods of fabricating a semiconductor device using a selective epitaxial growth technique
SAMSUNG ELECTRONICS CO LTD94 citations98
US6933245B2Aug 23, 2005
Method of forming a thin film with a low hydrogen content on a semiconductor device
SAMSUNG ELECTRONICS CO LTD74 citations98
US6893915B2May 17, 2005
Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD84 citations98
US6828218B2Dec 7, 2004
Method of forming a thin film using atomic layer deposition
SAMSUNG ELECTRONICS CO LTD96 citations98
US7385247B2Jun 10, 2008
At least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD46 citations96
US6218260B1Apr 17, 2001
Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby
SAMSUNG ELECTRONICS CO LTD76 citations95
US9521983B2Dec 20, 2016
X-ray apparatus
SAMSUNG ELECTRONICS CO LTD27 citations93
US7671420B2Mar 2, 2010
Semiconductor devices having faceted channels and methods of fabricating such devices
SAMSUNG ELECTRONICS CO LTD28 citations92
US7646056B2Jan 12, 2010
Gate structures of a non-volatile memory device and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD39 citations92
US7561636B2Jul 14, 2009
Digital predistortion apparatus and method in power amplifier
SAMSUNG ELECTRONICS CO LTD20 citations92
US7529571B2May 5, 2009
Sliding/hinge apparatus for sliding/rotating type mobile terminals
SAMSUNG ELECTRONICS CO LTD50 citations92
US7354835B2Apr 8, 2008
Method of fabricating CMOS transistor and CMOS transistor fabricated thereby
SAMSUNG ELECTRONICS CO LTD26 citations92
US7033895B2Apr 25, 2006
Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth process
SAMSUNG ELECTRONICS CO LTD22 citations92
US6599807B2Jul 29, 2003
Method for manufacturing capacitor of semiconductor device having improved leakage current characteristics
SAMSUNG ELECTRONICS CO LTD33 citations92
US9438801B2Sep 6, 2016
Camera module having a moving frame
SAMSUNG ELECTRONICS CO LTD22 citations90
US9269775B2Feb 23, 2016
Tunneling devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD30 citations90
US7723193B2May 25, 2010
Method of forming an at least penta-sided-channel type of FinFET transistor
SAMSUNG ELECTRONICS CO LTD13 citations84
US7601983B2Oct 13, 2009
Transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7517750B2Apr 14, 2009
Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7510931B2Mar 31, 2009
Method of fabricating a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7354821B2Apr 8, 2008
Methods of fabricating trench capacitors with insulating layer collars in undercut regions
SAMSUNG ELECTRONICS CO LTD10 citations84
US7144771B2Dec 5, 2006
Methods of forming electronic devices including dielectric layers with different densities of titanium
SAMSUNG ELECTRONICS CO LTD12 citations84
US6448146B1Sep 10, 2002
Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes
SAMSUNG ELECTRONICS CO LTD17 citations84
US6077573AJun 20, 2000
Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layers
SAMSUNG ELECTRONICS CO LTD18 citations84
US10076290B2Sep 18, 2018
X-ray imaging apparatus and control method for the same
SAMSUNG ELECTRONICS CO LTD8 citations82
US9832383B2Nov 28, 2017
Camera module having a moving frame
SAMSUNG ELECTRONICS CO LTD9 citations82
US9949702B2Apr 24, 2018
X-ray grid structure and X-ray apparatus including the same
SAMSUNG ELECTRONICS CO LTD8 citations79
US7611973B2Nov 3, 2009
Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7094712B2Aug 22, 2006
High performance MIS capacitor with HfO2 dielectric
SAMSUNG ELECTRONICS CO LTD10 citations74
US6833310B2Dec 21, 2004
Semiconductor device having thin film formed by atomic layer deposition and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
HYUNDAI MOBIS CO LTD
3 patentsUS12090847B2Sep 17, 2024
Apparatus and method for controlling display
HYUNDAI MOBIS CO LTD3 citations75
US12187120B2Jan 7, 2025
Control system and method using in-vehicle gesture input
HYUNDAI MOBIS CO LTD1 citations74
US11554668B2Jan 17, 2023
Control system and method using in-vehicle gesture input
HYUNDAI MOBIS CO LTD1 citations73
KIA MOTORS CORP
2 patentsHYUNDAI MOTOR CO LTD
2 patentsLG ELECTRONICS INC
1 patentASM IP HOLDING BV
1 patentKOREA INST SCI & TECH
1 patentKOREA ELECTRONICS TELECOMM
1 patentHYUNDAI ELECTRONICS IND
1 patentPARK IN KIL
1 patentSK HYNIX INC
1 patentLEE SEUNG MOK
1 patentMAGNACHIP SEMICONDUCTOR LTD
1 patentBYUN CHANG-HEUM
1 patentLG INF & COMM LTD
1 patentShowing the top 50 of 292 patents by PatentIndex Score.