Inventor
MOMMA NAOHIRO
JP22 patents
⚠️ This page may combine multiple inventors who share the name “MOMMA NAOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
21 patentsUS6661659B2Dec 9, 2003
Water cooled inverter
HITACHI LTD121 citations99
US5726488AMar 10, 1998
Semiconductor device having semiconductor elements formed in a retrograde well structure
HITACHI LTD134 citations99
US4772927ASep 20, 1988
Thin film FET doped with diffusion inhibitor
HITACHI LTD171 citations99
US6621701B2Sep 16, 2003
Water cooled inverter
HITACHI LTD104 citations98
US5294811AMar 15, 1994
Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
HITACHI LTD170 citations98
US4862240AAug 29, 1989
Complementary semiconductor device
HITACHI LTD62 citations96
US6353258B1Mar 5, 2002
Semiconductor module
HITACHI LTD65 citations95
US4879041ANov 7, 1989
Process for producing ultra-pure water and process for using said ultra-pure water
HITACHI LTD112 citations95
US4876983AOct 31, 1989
Plasma operation apparatus
HITACHI LTD70 citations95
US5883403AMar 16, 1999
Power semiconductor device
HITACHI LTD29 citations92
US5084355AJan 28, 1992
Laminar structure comprising organic material and inorganic material
HITACHI LTD30 citations92
US4956693ASep 11, 1990
Semiconductor device
HITACHI LTD62 citations92
US4894801AJan 16, 1990
Stacked MOS transistor flip-flop memory cell
HITACHI LTD43 citations92
US4735916AApr 5, 1988
Method of fabricating bipolar transistors and insulated gate field effect transistors having doped polycrystalline silicon conductors
HITACHI LTD43 citations92
US4963973AOct 16, 1990
Semiconductor device
HITACHI LTD17 citations82
US5433788AJul 18, 1995
Apparatus for plasma treatment using electron cyclotron resonance
HITACHI LTD9 citations74
US4794445ADec 27, 1988
Semiconductor device
HITACHI LTD13 citations74
US4415385ANov 15, 1983
Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel
HITACHI LTD9 citations74
US4402001AAug 30, 1983
Semiconductor element capable of withstanding high voltage
HITACHI LTD10 citations74
US4682199AJul 21, 1987
High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer
HITACHI LTD6 citations63
US4266990AMay 12, 1981
Process for diffusion of aluminum into a semiconductor
HITACHI LTD6 citations63