Inventor
NAKANO MOTOO
JP28 patents
⚠️ This page may combine multiple inventors who share the name “NAKANO MOTOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
23 patentsUS4262340AApr 14, 1981
Semiconductor memory device
FUJITSU LTD206 citations99
US4375993AMar 8, 1983
Method of producing a semiconductor device by simultaneous multiple laser annealing
FUJITSU LTD84 citations96
US5331180AJul 19, 1994
Porous semiconductor light emitting device
FUJITSU LTD44 citations95
US4425700AJan 17, 1984
Semiconductor device and method for manufacturing the same
FUJITSU LTD39 citations93
US5427977AJun 27, 1995
Method for manufacturing porous semiconductor light emitting device
FUJITSU LTD34 citations92
US4841349AJun 20, 1989
Semiconductor photodetector device with light responsive PN junction gate
FUJITSU LTD48 citations92
US4669062AMay 26, 1987
Two-tiered dynamic random access memory (DRAM) cell
FUJITSU LTD26 citations92
US4788473ANov 29, 1988
Plasma generating device with stepped waveguide transition
FUJITSU LTD33 citations91
US5250465AOct 5, 1993
Method of manufacturing semiconductor devices
FUJITSU LTD41 citations89
US4503315AMar 5, 1985
Semiconductor device with fuse
FUJITSU LTD19 citations82
US5648676AJul 15, 1997
Semiconductor device with protective element
FUJITSU LTD14 citations74
US4727043AFeb 23, 1988
Method of manufacturing a non-volatile memory
FUJITSU LTD17 citations74
US4538166AAug 27, 1985
Semiconductor memory device
FUJITSU LTD16 citations74
US4461072AJul 24, 1984
Method for preparing an insulated gate field effect transistor
FUJITSU LTD6 citations74
US4350536ASep 21, 1982
Method of producing dynamic random-access memory cells
FUJITSU LTD19 citations74
US4806769AFeb 21, 1989
Disk exchangeable target mechanism with effective cooling means, for ion implantation system
FUJITSU LTD12 citations73
US4258077AMar 24, 1981
Method of ion implantation into a semiconductor substrate provided with an insulating film
FUJITSU LTD12 citations73
US4275093AJun 23, 1981
Method of manufacturing insulated gate semiconductor devices by high pressure thermal oxidation with water vapor
FUJITSU LTD8 citations72
US5670885ASep 23, 1997
Semiconductor device
FUJITSU LTD2 citations63
US4541074ASep 10, 1985
Semiconductor device for memory cell
FUJITSU LTD4 citations63
US4454525AJun 12, 1984
IGFET Having crystal orientation near (944) to minimize white ribbon
FUJITSU LTD2 citations63
US6251743B1Jun 26, 2001
Method of liquid treatment of microstructures comprising bendable structural members
FUJITSU LTD2 citations62
US5652167AJul 29, 1997
Method of liquid treatment of micro-structures comprising structural members liable to be bent
FUJITSU LTD1 citations62
NEC CORP
3 patentsUS6836668B1Dec 28, 2004
Portable communication apparatus with voice/character conversion direction switch
NEC CORP10 citations74
US6639941B1Oct 28, 2003
Radio-signal transceiver
NEC CORP11 citations74
US7366539B2Apr 29, 2008
Mobile terminal and method of obtaining web contents through the same
NEC CORP4 citations63