Inventor
KIRISAWA RYOUHEI
JP74 patents
⚠️ This page may combine multiple inventors who share the name “KIRISAWA RYOUHEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
31 patentsUS8374033B2Feb 12, 2013
Nonvolatile semiconductor memory device
TOSHIBA KK200 citations99
US5602789AFeb 11, 1997
Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
TOSHIBA KK284 citations99
US5469444ANov 21, 1995
Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels
TOSHIBA KK174 citations99
US5386422AJan 31, 1995
Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels
TOSHIBA KK293 citations99
US5321699AJun 14, 1994
Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels
TOSHIBA KK171 citations99
US4959812ASep 25, 1990
Electrically erasable programmable read-only memory with NAND cell structure
TOSHIBA KK652 citations99
US4939690AJul 3, 1990
Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation
TOSHIBA KK142 citations98
USRE35838EJul 7, 1998
Electrically erasable programmable read-only memory with NAND cell structure
TOSHIBA KK90 citations96
US5768195AJun 16, 1998
Semiconductor memory device
TOSHIBA KK64 citations96
US5528547AJun 18, 1996
Electrically erasable programmable read-only memory with electric field decreasing controller
TOSHIBA KK52 citations96
US5293337AMar 8, 1994
Electrically erasable programmable read-only memory with electric field decreasing controller
TOSHIBA KK100 citations96
US5050125ASep 17, 1991
Electrically erasable programmable read-only memory with NAND cellstructure
TOSHIBA KK60 citations95
US9312134B2Apr 12, 2016
Nonvolatile semiconductor memory device and method for manufacturing same
TOSHIBA KK12 citations93
US6555870B1Apr 29, 2003
Nonvolatile semiconductor memory device and method for producing same
TOSHIBA KK40 citations93
US5402373AMar 28, 1995
Electrically erasable programmable read-only memory with electric field decreasing controller
TOSHIBA KK29 citations93
US5392238AFeb 21, 1995
Nonvolatile semiconductor memory device
TOSHIBA KK43 citations93
US5978265ANov 2, 1999
Non-volatile semiconductor memory device with nand type memory cell arrays
TOSHIBA KK35 citations92
US5824583AOct 20, 1998
Non-volatile semiconductor memory and method of manufacturing the same
TOSHIBA KK26 citations92
US5515327AMay 7, 1996
Nonvolatile semiconductor memory device having a small number of internal boosting circuits
TOSHIBA KK35 citations92
US5508957AApr 16, 1996
Non-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-through
TOSHIBA KK56 citations92
US5464998ANov 7, 1995
Non-volatile semiconductor memory NAND structure with differently doped channel stoppers
TOSHIBA KK23 citations92
US5323039AJun 21, 1994
Non-volatile semiconductor memory and method of manufacturing the same
TOSHIBA KK20 citations92
US5179427AJan 12, 1993
Non-volatile semiconductor memory device with voltage stabilizing electrode
TOSHIBA KK32 citations92
US9601503B2Mar 21, 2017
Nonvolatile semiconductor memory device and method for manufacturing same
TOSHIBA KK7 citations84
US9318503B2Apr 19, 2016
Nonvolatile semiconductor memory device and method for manufacturing same
TOSHIBA KK4 citations84
US8748971B2Jun 10, 2014
Three dimensional nonvolatile semiconductor memory having pillars provided inside an oblate through hole
TOSHIBA KK15 citations84
US8654586B2Feb 18, 2014
Nonvolatile semiconductor memory device
TOSHIBA KK13 citations84
US8361862B2Jan 29, 2013
Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device
TOSHIBA KK7 citations84
US5597748AJan 28, 1997
Method of manufacturing NAND type EEPROM
TOSHIBA KK6 citations74
US9029934B2May 12, 2015
Nonvolatile semiconductor memory device including floating gate electrodes formed between control gate electrodes and vertically formed along a semiconductor pillar
TOSHIBA KK4 citations73
US8351277B2Jan 8, 2013
Method for operating semiconductor memory device
TOSHIBA KK5 citations73
TANAKA HIROYASU
2 patentsUS8436414B2May 7, 2013
Non-volatile semiconductor stacked memory device having two semiconductor pillars in a through hole and method for manufacturing same
TANAKA HIROYASU56 citations98
US8188530B2May 29, 2012
Nonvolatile semiconductor memory device and method for manufacturing same
TANAKA HIROYASU31 citations92
FUKUZUMI YOSHIAKI
2 patentsKIDOH MASARU
2 patentsKIOXIA CORP
2 patentsTOSHIBA MEMORY CORP
2 patentsKATSUMATA RYOTA
2 patentsFUJIWARA TOMOKO
1 patentHISHIDA TOMOO
1 patentOOTA SHIGETO
1 patentIMAMURA TAKESHI
1 patentKIRISAWA RYOUHEI
1 patentMIKAJIRI YOSHIMASA
1 patentKITO MASARU
1 patentShowing the top 50 of 74 patents by PatentIndex Score.