Inventor
CHAN TSIU C
US61 patents
⚠️ This page may combine multiple inventors who share the name “CHAN TSIU C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
28 patentsUS5683924ANov 4, 1997
Method of forming raised source/drain regions in a integrated circuit
SGS THOMSON MICROELECTRONICS66 citations96
US5682055AOct 28, 1997
Method of forming planarized structures in an integrated circuit
SGS THOMSON MICROELECTRONICS62 citations96
US5116777AMay 26, 1992
Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
SGS THOMSON MICROELECTRONICS72 citations96
US5006481AApr 9, 1991
Method of making a stacked capacitor DRAM cell
SGS THOMSON MICROELECTRONICS65 citations96
US4868138ASep 19, 1989
Method for forming a self-aligned source/drain contact for an MOS transistor
SGS THOMSON MICROELECTRONICS74 citations96
US5623438AApr 22, 1997
Virtual ground read only memory circuit
SGS THOMSON MICROELECTRONICS85 citations95
US5272371ADec 21, 1993
Electrostatic discharge protection structure
SGS THOMSON MICROELECTRONICS64 citations95
US5151387ASep 29, 1992
Polycrystalline silicon contact structure
SGS THOMSON MICROELECTRONICS51 citations95
US5329143AJul 12, 1994
ESD protection circuit
SGS THOMSON MICROELECTRONICS92 citations94
US5426065AJun 20, 1995
Method of making transistor devices in an SRAM cell
SGS THOMSON MICROELECTRONICS25 citations93
US5310692AMay 10, 1994
Method of forming a MOSFET structure with planar surface
SGS THOMSON MICROELECTRONICS24 citations93
US5187114AFeb 16, 1993
Method of making SRAM cell and structure with polycrystalline P-channel load devices
SGS THOMSON MICROELECTRONICS46 citations93
US5116776AMay 26, 1992
Method of making a stacked copacitor for dram cell
SGS THOMSON MICROELECTRONICS45 citations93
US5770892AJun 23, 1998
Field effect device with polycrystalline silicon channel
SGS THOMSON MICROELECTRONICS33 citations92
US5705427AJan 6, 1998
Method of forming a landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS30 citations92
US5702979ADec 30, 1997
Method of forming a landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS19 citations92
US5196233AMar 23, 1993
Method for fabricating semiconductor circuits
SGS THOMSON MICROELECTRONICS26 citations92
US5135888AAug 4, 1992
Field effect device with polycrystalline silicon channel
SGS THOMSON MICROELECTRONICS33 citations92
US5489797AFeb 6, 1996
Local interconnect structure
SGS THOMSON MICROELECTRONICS21 citations91
US5204279AApr 20, 1993
Method of making SRAM cell and structure with polycrystalline p-channel load devices
SGS THOMSON MICROELECTRONICS28 citations90
US4981813AJan 1, 1991
Pad oxide protect sealed interface isolation process
SGS THOMSON MICROELECTRONICS20 citations82
US5330933AJul 19, 1994
Method for fabricating semiconductor circuits
SGS THOMSON MICROELECTRONICS14 citations81
US5525823AJun 11, 1996
Manufacture of CMOS devices
SGS THOMSON MICROELECTRONICS8 citations74
US5448091ASep 5, 1995
Method of making contact alignment for nonvolatile memory devices
SGS THOMSON MICROELECTRONICS12 citations74
US5376571ADec 27, 1994
Method of making contact alignment for nonvolatile memory devices
SGS THOMSON MICROELECTRONICS15 citations74
US5300797AApr 5, 1994
Coplanar twin-well integrated circuit structure
SGS THOMSON MICROELECTRONICS14 citations74
US5231043AJul 27, 1993
Contact alignment for integrated circuits
SGS THOMSON MICROELECTRONICS10 citations74
US5196909AMar 23, 1993
Capacitor for DRAM cell
SGS THOMSON MICROELECTRONICS7 citations74
ST MICROELECTRONICS INC
14 patentsUS6194276B1Feb 27, 2001
Radiation hardened semiconductor memory
ST MICROELECTRONICS INC54 citations96
US6100194AAug 8, 2000
Silver metallization by damascene method
ST MICROELECTRONICS INC64 citations96
US6380598B1Apr 30, 2002
Radiation hardened semiconductor memory
ST MICROELECTRONICS INC38 citations93
US5955770ASep 21, 1999
Method of forming raised source/drain regions in an integrated circuit
ST MICROELECTRONICS INC19 citations93
US6180509B1Jan 30, 2001
Method for forming planarized multilevel metallization in an integrated circuit
ST MICROELECTRONICS INC24 citations92
US6091630AJul 18, 2000
Radiation hardened semiconductor memory
ST MICROELECTRONICS INC26 citations92
US5894160AApr 13, 1999
Method of forming a landing pad structure in an integrated circuit
ST MICROELECTRONICS INC18 citations92
US6128243AOct 3, 2000
Shadow memory for a SRAM and method
ST MICROELECTRONICS INC34 citations90
US6034886AMar 7, 2000
Shadow memory for a SRAM and method
ST MICROELECTRONICS INC41 citations90
US6005790ADec 21, 1999
Floating gate content addressable memory
ST MICROELECTRONICS INC47 citations90
US6410985B1Jun 25, 2002
Silver metallization by damascene method
ST MICROELECTRONICS INC7 citations74
US6297110B1Oct 2, 2001
Method of forming a contact in an integrated circuit
ST MICROELECTRONICS INC11 citations74
USRE36938EOct 31, 2000
Method of forming a landing pad structure in an integrated circuit
ST MICROELECTRONICS INC12 citations74
US6191484B1Feb 20, 2001
Method of forming planarized multilevel metallization in an integrated circuit
ST MICROELECTRONICS INC13 citations73
MOSTEK CORP
6 patentsUS4599118AJul 8, 1986
Method of making MOSFET by multiple implantations followed by a diffusion step
MOSTEK CORP65 citations96
US4125854ANov 14, 1978
Symmetrical cell layout for static RAM
MOSTEK CORP76 citations95
US4392210AJul 5, 1983
One transistor-one capacitor memory cell
MOSTEK CORP20 citations82
US4290185ASep 22, 1981
Method of making an extremely low current load device for integrated circuit
MOSTEK CORP24 citations81
US4297721AOct 27, 1981
Extremely low current load device for integrated circuit
MOSTEK CORP28 citations76
US4553314ANov 19, 1985
Method for making a semiconductor device
MOSTEK CORP23 citations75
STMICROCELECTRONICS INC
1 patentTHOMSON COMPONENTS MOSTEK CORP
1 patentShowing the top 50 of 61 patents by PatentIndex Score.