P

Inventor

CHAN TSIU C

US61 patents
⚠️ This page may combine multiple inventors who share the name “CHAN TSIU C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

28 patents
US5683924ANov 4, 1997

Method of forming raised source/drain regions in a integrated circuit

SGS THOMSON MICROELECTRONICS66 citations96
US5682055AOct 28, 1997

Method of forming planarized structures in an integrated circuit

SGS THOMSON MICROELECTRONICS62 citations96
US5116777AMay 26, 1992

Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation

SGS THOMSON MICROELECTRONICS72 citations96
US5006481AApr 9, 1991

Method of making a stacked capacitor DRAM cell

SGS THOMSON MICROELECTRONICS65 citations96
US4868138ASep 19, 1989

Method for forming a self-aligned source/drain contact for an MOS transistor

SGS THOMSON MICROELECTRONICS74 citations96
US5623438AApr 22, 1997

Virtual ground read only memory circuit

SGS THOMSON MICROELECTRONICS85 citations95
US5272371ADec 21, 1993

Electrostatic discharge protection structure

SGS THOMSON MICROELECTRONICS64 citations95
US5151387ASep 29, 1992

Polycrystalline silicon contact structure

SGS THOMSON MICROELECTRONICS51 citations95
US5329143AJul 12, 1994

ESD protection circuit

SGS THOMSON MICROELECTRONICS92 citations94
US5426065AJun 20, 1995

Method of making transistor devices in an SRAM cell

SGS THOMSON MICROELECTRONICS25 citations93
US5310692AMay 10, 1994

Method of forming a MOSFET structure with planar surface

SGS THOMSON MICROELECTRONICS24 citations93
US5187114AFeb 16, 1993

Method of making SRAM cell and structure with polycrystalline P-channel load devices

SGS THOMSON MICROELECTRONICS46 citations93
US5116776AMay 26, 1992

Method of making a stacked copacitor for dram cell

SGS THOMSON MICROELECTRONICS45 citations93
US5770892AJun 23, 1998

Field effect device with polycrystalline silicon channel

SGS THOMSON MICROELECTRONICS33 citations92
US5705427AJan 6, 1998

Method of forming a landing pad structure in an integrated circuit

SGS THOMSON MICROELECTRONICS30 citations92
US5702979ADec 30, 1997

Method of forming a landing pad structure in an integrated circuit

SGS THOMSON MICROELECTRONICS19 citations92
US5196233AMar 23, 1993

Method for fabricating semiconductor circuits

SGS THOMSON MICROELECTRONICS26 citations92
US5135888AAug 4, 1992

Field effect device with polycrystalline silicon channel

SGS THOMSON MICROELECTRONICS33 citations92
US5489797AFeb 6, 1996

Local interconnect structure

SGS THOMSON MICROELECTRONICS21 citations91
US5204279AApr 20, 1993

Method of making SRAM cell and structure with polycrystalline p-channel load devices

SGS THOMSON MICROELECTRONICS28 citations90
US4981813AJan 1, 1991

Pad oxide protect sealed interface isolation process

SGS THOMSON MICROELECTRONICS20 citations82
US5330933AJul 19, 1994

Method for fabricating semiconductor circuits

SGS THOMSON MICROELECTRONICS14 citations81
US5525823AJun 11, 1996

Manufacture of CMOS devices

SGS THOMSON MICROELECTRONICS8 citations74
US5448091ASep 5, 1995

Method of making contact alignment for nonvolatile memory devices

SGS THOMSON MICROELECTRONICS12 citations74
US5376571ADec 27, 1994

Method of making contact alignment for nonvolatile memory devices

SGS THOMSON MICROELECTRONICS15 citations74
US5300797AApr 5, 1994

Coplanar twin-well integrated circuit structure

SGS THOMSON MICROELECTRONICS14 citations74
US5231043AJul 27, 1993

Contact alignment for integrated circuits

SGS THOMSON MICROELECTRONICS10 citations74
US5196909AMar 23, 1993

Capacitor for DRAM cell

SGS THOMSON MICROELECTRONICS7 citations74

ST MICROELECTRONICS INC

14 patents
US6194276B1Feb 27, 2001

Radiation hardened semiconductor memory

ST MICROELECTRONICS INC54 citations96
US6100194AAug 8, 2000

Silver metallization by damascene method

ST MICROELECTRONICS INC64 citations96
US6380598B1Apr 30, 2002

Radiation hardened semiconductor memory

ST MICROELECTRONICS INC38 citations93
US5955770ASep 21, 1999

Method of forming raised source/drain regions in an integrated circuit

ST MICROELECTRONICS INC19 citations93
US6180509B1Jan 30, 2001

Method for forming planarized multilevel metallization in an integrated circuit

ST MICROELECTRONICS INC24 citations92
US6091630AJul 18, 2000

Radiation hardened semiconductor memory

ST MICROELECTRONICS INC26 citations92
US5894160AApr 13, 1999

Method of forming a landing pad structure in an integrated circuit

ST MICROELECTRONICS INC18 citations92
US6128243AOct 3, 2000

Shadow memory for a SRAM and method

ST MICROELECTRONICS INC34 citations90
US6034886AMar 7, 2000

Shadow memory for a SRAM and method

ST MICROELECTRONICS INC41 citations90
US6005790ADec 21, 1999

Floating gate content addressable memory

ST MICROELECTRONICS INC47 citations90
US6410985B1Jun 25, 2002

Silver metallization by damascene method

ST MICROELECTRONICS INC7 citations74
US6297110B1Oct 2, 2001

Method of forming a contact in an integrated circuit

ST MICROELECTRONICS INC11 citations74
USRE36938EOct 31, 2000

Method of forming a landing pad structure in an integrated circuit

ST MICROELECTRONICS INC12 citations74
US6191484B1Feb 20, 2001

Method of forming planarized multilevel metallization in an integrated circuit

ST MICROELECTRONICS INC13 citations73

MOSTEK CORP

6 patents

STMICROCELECTRONICS INC

1 patent

THOMSON COMPONENTS MOSTEK CORP

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.