Inventor
NGUYEN LOI N
US25 patents
⚠️ This page may combine multiple inventors who share the name “NGUYEN LOI N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS INC
14 patentsUS5914518AJun 22, 1999
Method of forming a metal contact to landing pad structure in an integrated circuit
ST MICROELECTRONICS INC22 citations92
US5894160AApr 13, 1999
Method of forming a landing pad structure in an integrated circuit
ST MICROELECTRONICS INC18 citations92
USRE36938EOct 31, 2000
Method of forming a landing pad structure in an integrated circuit
ST MICROELECTRONICS INC12 citations74
US5956615ASep 21, 1999
Method of forming a metal contact to landing pad structure in an integrated circuit
ST MICROELECTRONICS INC13 citations74
US5870330AFeb 9, 1999
Method of making and structure of SRAM storage cell with N channel thin film transistor load devices
ST MICROELECTRONICS INC5 citations74
US6472261B2Oct 29, 2002
Method of forming an integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure
ST MICROELECTRONICS INC8 citations73
US6093963AJul 25, 2000
Dual landing pad structure including dielectric pocket
ST MICROELECTRONICS INC12 citations73
US6057604AMay 2, 2000
Integrated circuit contact structure having gate electrode protection for self-aligned contacts with zero enclosure
ST MICROELECTRONICS INC7 citations73
US5945738AAug 31, 1999
Dual landing pad structure in an integrated circuit
ST MICROELECTRONICS INC7 citations73
US5909636AJun 1, 1999
Method of forming a landing pad structure in an integrated circuit
ST MICROELECTRONICS INC3 citations62
US6251713B1Jun 26, 2001
Method of making an SRAM storage cell with N channel thin film transistor load devices
ST MICROELECTRONICS INC1 citations52
US8680631B2Mar 25, 2014
High aspect ratio capacitively coupled MEMS devices
ST MICROELECTRONICS INC0 citations50
US8022491B2Sep 20, 2011
High aspect ratio all SiGe capacitively coupled MEMS devices
ST MICROELECTRONICS INC0 citations50
US8853850B2Oct 7, 2014
MEMS packaging scheme using dielectric fence
ST MICROELECTRONICS INC0 citations45
SGS THOMSON MICROELECTRONICS
7 patentsUS5705427AJan 6, 1998
Method of forming a landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS30 citations92
US5702979ADec 30, 1997
Method of forming a landing pad structure in an integrated circuit
SGS THOMSON MICROELECTRONICS19 citations92
US5323047AJun 21, 1994
Structure formed by a method of patterning a submicron semiconductor layer
SGS THOMSON MICROELECTRONICS34 citations92
US5597983AJan 28, 1997
Process of removing polymers in semiconductor vias
SGS THOMSON MICROELECTRONICS14 citations74
US5423939AJun 13, 1995
Method for forming contact plugs in integrated circuits
SGS THOMSON MICROELECTRONICS11 citations74
US5412868AMay 9, 1995
Process of removing polymers in semiconductor vias
SGS THOMSON MICROELECTRONICS8 citations74
US5793114AAug 11, 1998
Self-aligned method for forming contact with zero offset to gate
SGS THOMSON MICROELECTRONICS10 citations73
MOHANAKRISHNASWAMY VENKATESH
4 patentsUS8193595B2Jun 5, 2012
Method of forming a die having an IC region adjacent a MEMS region
MOHANAKRISHNASWAMY VENKATESH2 citations60
US8853802B2Oct 7, 2014
Method of forming a die having an IC region adjacent a MEMS region
MOHANAKRISHNASWAMY VENKATESH0 citations49
US8432006B2Apr 30, 2013
High aspect ratio capacitively coupled MEMS devices
MOHANAKRISHNASWAMY VENKATESH0 citations48
US8405202B2Mar 26, 2013
MEMS packaging scheme using dielectric fence
MOHANAKRISHNASWAMY VENKATESH0 citations43