Inventor

HWANG BYUNG-KEUN

KR15 patents

⚠️ This page may combine multiple inventors who share the name “HWANG BYUNG-KEUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

12 patents

US6057251AMay 2, 2000

Method for forming interlevel dielectric layer in semiconductor device using electron beams

SAMSUNG ELECTRONICS CO LTD67 citations95

US5989983ANov 23, 1999

Method of fabricating and curing spin-on-glass layers by electron beam irradiation

SAMSUNG ELECTRONICS CO LTD64 citations95

US6372672B1Apr 16, 2002

Method of forming a silicon nitride layer in a semiconductor device

SAMSUNG ELECTRONICS CO LTD28 citations92

US6117785ASep 12, 2000

Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon

SAMSUNG ELECTRONICS CO LTD21 citations92

US5629238AMay 13, 1997

Method for forming conductive line of semiconductor device

SAMSUNG ELECTRONICS CO LTD31 citations92

US6337282B2Jan 8, 2002

Method for forming a dielectric layer

SAMSUNG ELECTRONICS CO LTD27 citations90

US10049882B1Aug 14, 2018

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

SAMSUNG ELECTRONICS CO LTD6 citations69

US5866476AFeb 2, 1999

Methods for forming moisture blocking layers

SAMSUNG ELECTRONICS CO LTD16 citations69

US6984594B2Jan 10, 2006

Deposition method of insulating layers having low dielectric constant of semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations62

US12588478B2Mar 24, 2026

Method of fabricating semiconductor device including organic and silicon oxide layers

SAMSUNG ELECTRONICS CO LTD0 citations60

US12500079B2Dec 16, 2025

Semiconductor device manufacturing method

SAMSUNG ELECTRONICS CO LTD0 citations49

US12557370B2Feb 17, 2026

Semiconductor device manufacturing method

SAMSUNG ELECTRONICS CO LTD0 citations48

DOW CORNING

3 patents

US6667553B2Dec 23, 2003

H:SiOC coated substrates

DOW CORNING57 citations92

US6593248B2Jul 15, 2003

Method for producing hydrogenated silicon oxycarbide films having low dielectric constant

DOW CORNING22 citations92

US7189664B2Mar 13, 2007

Method for producing hydrogenated silicon-oxycarbide films

DOW CORNING3 citations62