Inventor
GOO JU-SEON
KR17 patents
⚠️ This page may combine multiple inventors who share the name “GOO JU-SEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS6566229B2May 20, 2003
Method of forming an insulating layer in a trench isolation type semiconductor device
SAMSUNG ELECTRONICS CO LTD102 citations97
US6057251AMay 2, 2000
Method for forming interlevel dielectric layer in semiconductor device using electron beams
SAMSUNG ELECTRONICS CO LTD67 citations95
US5989983ANov 23, 1999
Method of fabricating and curing spin-on-glass layers by electron beam irradiation
SAMSUNG ELECTRONICS CO LTD64 citations95
US7674685B2Mar 9, 2010
Semiconductor device isolation structures and methods of fabricating such structures
SAMSUNG ELECTRONICS CO LTD21 citations92
US7192891B2Mar 20, 2007
Method for forming a silicon oxide layer using spin-on glass
SAMSUNG ELECTRONICS CO LTD21 citations92
US6635586B2Oct 21, 2003
Method of forming a spin-on-glass insulation layer
SAMSUNG ELECTRONICS CO LTD27 citations92
US6489252B2Dec 3, 2002
Method of forming a spin-on-glass insulation layer
SAMSUNG ELECTRONICS CO LTD28 citations92
US6117785ASep 12, 2000
Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon
SAMSUNG ELECTRONICS CO LTD21 citations92
US7332409B2Feb 19, 2008
Methods of forming trench isolation layers using high density plasma chemical vapor deposition
SAMSUNG ELECTRONICS CO LTD13 citations82
US6368906B1Apr 9, 2002
Method of planarization using selecting curing of SOG layer
SAMSUNG ELECTRONICS CO LTD12 citations74
US7517817B2Apr 14, 2009
Method for forming a silicon oxide layer using spin-on glass
SAMSUNG ELECTRONICS CO LTD7 citations73
US6645879B2Nov 11, 2003
Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7842569B2Nov 30, 2010
Flash memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US7358190B2Apr 15, 2008
Methods of filling gaps by deposition on materials having different deposition rates
SAMSUNG ELECTRONICS CO LTD6 citations62
US8043914B2Oct 25, 2011
Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate
SAMSUNG ELECTRONICS CO LTD4 citations61
US7781304B2Aug 24, 2010
Semiconductor device having trench isolation region and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations39