Inventor
SHEN CHIH-HENG
TW32 patents
⚠️ This page may combine multiple inventors who share the name “SHEN CHIH-HENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
23 patentsUS5723385AMar 3, 1998
Wafer edge seal ring structure
TAIWAN SEMICONDUCTOR MFG46 citations93
US6380030B1Apr 30, 2002
Implant method for forming Si3N4 spacer
TAIWAN SEMICONDUCTOR MFG25 citations92
US5783097AJul 21, 1998
Process to avoid dielectric damage at the flat edge of the water
TAIWAN SEMICONDUCTOR MFG28 citations92
US5747383AMay 5, 1998
Method for forming conductive lines and stacked vias
TAIWAN SEMICONDUCTOR MFG27 citations92
US6627971B1Sep 30, 2003
Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates
TAIWAN SEMICONDUCTOR MFG21 citations91
US6071826AJun 6, 2000
Method of manufacturing CMOS image sensor leakage free with double layer spacer
TAIWAN SEMICONDUCTOR MFG38 citations90
US5591673AJan 7, 1997
Tungsten stud process for stacked via applications
TAIWAN SEMICONDUCTOR MFG32 citations88
US6627475B1Sep 30, 2003
Buried photodiode structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG15 citations83
US6803327B1Oct 12, 2004
Cost effective polymide process to solve passivation extrusion or damage and SOG delminates
TAIWAN SEMICONDUCTOR MFG14 citations80
US5668401ASep 16, 1997
Chessboard pattern layout for scribe lines
TAIWAN SEMICONDUCTOR MFG11 citations74
US6624466B2Sep 23, 2003
Implant method for forming Si3N4 spacer
TAIWAN SEMICONDUCTOR MFG7 citations73
US6407433B1Jun 18, 2002
Preventing gate oxide damage by post poly definition implantation while gate mask is on
TAIWAN SEMICONDUCTOR MFG5 citations73
US6162584ADec 19, 2000
Method of fabricating polysilicon structures with different resistance values for gate electrodes, resistors and capacitor plates in an integrated circuit
TAIWAN SEMICONDUCTOR MFG14 citations73
US6147372ANov 14, 2000
Layout of an image sensor for increasing photon induced current
TAIWAN SEMICONDUCTOR MFG8 citations73
US9312348B2Apr 12, 2016
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG3 citations72
US6143474ANov 7, 2000
Method of fabricating polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor plates
TAIWAN SEMICONDUCTOR MFG7 citations72
US5929509AJul 27, 1999
Wafer edge seal ring structure
TAIWAN SEMICONDUCTOR MFG12 citations71
US5913979AJun 22, 1999
Method for removing spin-on-glass at wafer edge
TAIWAN SEMICONDUCTOR MFG12 citations71
US5492868AFeb 20, 1996
Capped reflow process to avoid contact autodoping and supress tungsten silicide peeling
TAIWAN SEMICONDUCTOR MFG9 citations68
US6995064B2Feb 7, 2006
Halogen gettering method for forming field effect transistor (FET) device
TAIWAN SEMICONDUCTOR MFG2 citations62
US6187639B1Feb 13, 2001
Method to prevent gate oxide damage by post poly definition implantation
TAIWAN SEMICONDUCTOR MFG3 citations62
US9166046B2Oct 20, 2015
Semiconductor device and method of manufacturing
TAIWAN SEMICONDUCTOR MFG3 citations61
US6949471B2Sep 27, 2005
Method for fabricating poly patterns
TAIWAN SEMICONDUCTOR MFG0 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS9882046B2Jan 30, 2018
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11233121B2Jan 25, 2022
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9647065B2May 9, 2017
Bipolar transistor structure having split collector region and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9558986B2Jan 31, 2017
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10840371B2Nov 17, 2020
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10686036B2Jun 16, 2020
Method of making bipolar transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10461183B2Oct 29, 2019
Ultra high voltage semiconductor device with electrostatic discharge capabilities
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9748377B2Aug 29, 2017
Semiconductor device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9985094B2May 29, 2018
Super junction with an angled trench, transistor having the super junction and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations41