Inventor
COURSEY BELFORD T
US21 patents
⚠️ This page may combine multiple inventors who share the name “COURSEY BELFORD T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
20 patentsUS6617222B1Sep 9, 2003
Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor device
MICRON TECHNOLOGY INC101 citations97
US6287935B1Sep 11, 2001
Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors
MICRON TECHNOLOGY INC59 citations96
US6232168B1May 15, 2001
Memory circuitry and method of forming memory circuitry
MICRON TECHNOLOGY INC28 citations96
US7026678B2Apr 11, 2006
Dynamic random access memory circuitry having storage capacitors within a well
MICRON TECHNOLOGY INC23 citations92
US6790725B2Sep 14, 2004
Double-sided capacitor structure for a semiconductor device and a method for forming the structure
MICRON TECHNOLOGY INC31 citations92
US6121084ASep 19, 2000
Semiconductor processing methods of forming hemispherical grain polysilicon layers, methods of forming capacitors, and capacitors
MICRON TECHNOLOGY INC34 citations92
US7115970B2Oct 3, 2006
Capacitor for use in an integrated circuit
MICRON TECHNOLOGY INC11 citations84
US7355231B2Apr 8, 2008
Memory circuitry with oxygen diffusion barrier layer received over a well base
MICRON TECHNOLOGY INC5 citations73
US6974993B2Dec 13, 2005
Double-sided capacitor structure for a semiconductor device and a method for forming the structure
MICRON TECHNOLOGY INC5 citations73
US6888217B2May 3, 2005
Capacitor for use in an integrated circuit
MICRON TECHNOLOGY INC10 citations73
US6426243B1Jul 30, 2002
Methods of forming dynamic random access memory circuitry
MICRON TECHNOLOGY INC9 citations73
US7078760B2Jul 18, 2006
Intermediate semiconductor device structure including multiple photoresist layers
MICRON TECHNOLOGY INC2 citations62
US6893958B2May 17, 2005
Methods for preventing cross-linking between multiple resists and patterning multiple resists
MICRON TECHNOLOGY INC4 citations62
US7148536B2Dec 12, 2006
Memory circuitry and method of forming memory circuitry
MICRON TECHNOLOGY INC0 citations52
US7105884B2Sep 12, 2006
Memory circuitry with plurality of capacitors received within an insulative layer well
MICRON TECHNOLOGY INC0 citations52
US7087949B2Aug 8, 2006
Selective hemispherical silicon grain (HSG) conversion inhibitor for use during the manufacture of a semiconductor device
MICRON TECHNOLOGY INC0 citations52
US6830972B2Dec 14, 2004
Method of forming memory circuitry
MICRON TECHNOLOGY INC0 citations52
US7211855B2May 1, 2007
Intermediate semiconductor device structure including multiple photoresist layers
MICRON TECHNOLOGY INC0 citations51
US9331236B2May 3, 2016
Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
MICRON TECHNOLOGY INC0 citations49
US9147803B2Sep 29, 2015
Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods
MICRON TECHNOLOGY INC1 citations49