Inventor
MIKAMI NOBORU
JP16 patents
⚠️ This page may combine multiple inventors who share the name “MIKAMI NOBORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
15 patentsUS6110291AAug 29, 2000
Thin film forming apparatus using laser
MITSUBISHI ELECTRIC CORP67 citations94
US7022606B2Apr 4, 2006
Underlayer film for copper, and a semiconductor device including the underlayer film
MITSUBISHI ELECTRIC CORP30 citations92
US6344991B1Feb 5, 2002
Nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP38 citations92
US6239460B1May 29, 2001
Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP36 citations92
US6049103AApr 11, 2000
Semiconductor capacitor
MITSUBISHI ELECTRIC CORP30 citations92
US4929081AMay 29, 1990
System for detecting defects in a regularly arranged pattern such as an integrated circuit or the like
MITSUBISHI ELECTRIC CORP34 citations92
US6015989AJan 18, 2000
Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen
MITSUBISHI ELECTRIC CORP53 citations90
US5159561AOct 27, 1992
Zero-phase sequence current detector
MITSUBISHI ELECTRIC CORP23 citations88
US6187622B1Feb 13, 2001
Semiconductor memory device and method for producing the same
MITSUBISHI ELECTRIC CORP19 citations84
US6458719B1Oct 1, 2002
Low dielectric constant film composed of boron, nitrogen, and hydrogen having thermal resistance, process for forming the film, use of the film between semiconductor device layers, and the device formed from the film
MITSUBISHI ELECTRIC CORP17 citations83
US7192540B2Mar 20, 2007
Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device
MITSUBISHI ELECTRIC CORP6 citations73
US7029605B2Apr 18, 2006
Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device
MITSUBISHI ELECTRIC CORP9 citations73
US5939744AAug 17, 1999
Semiconductor device with x-ray absorption layer
MITSUBISHI ELECTRIC CORP10 citations73
US6420191B2Jul 16, 2002
Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
MITSUBISHI ELECTRIC CORP2 citations62
US7847296B2Dec 7, 2010
Silicon carbide semiconductor device
MITSUBISHI ELECTRIC CORP0 citations42