P

Inventor

CHO UK-RAE

KR49 patents
⚠️ This page may combine multiple inventors who share the name “CHO UK-RAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

46 patents
US6573746B2Jun 3, 2003

Impedance control circuit

SAMSUNG ELECTRONICS CO LTD130 citations98
US6525558B2Feb 25, 2003

Programmable impedance control circuit

SAMSUNG ELECTRONICS CO LTD99 citations98
US6661250B2Dec 9, 2003

Programmable impedance control circuit

SAMSUNG ELECTRONICS CO LTD74 citations96
US6642740B2Nov 4, 2003

Programmable termination circuit and method

SAMSUNG ELECTRONICS CO LTD65 citations96
US6456124B1Sep 24, 2002

Method and apparatus for controlling impedance of an off-chip driver circuit

SAMSUNG ELECTRONICS CO LTD57 citations96
US6839286B2Jan 4, 2005

Semiconductor device with programmable impedance control circuit

SAMSUNG ELECTRONICS CO LTD57 citations95
US7489570B2Feb 10, 2009

Semiconductor memory device with hierarchical bit line structure

SAMSUNG ELECTRONICS CO LTD15 citations93
US6947336B2Sep 20, 2005

Semiconductor device with impedance control circuit

SAMSUNG ELECTRONICS CO LTD52 citations93
US6429679B1Aug 6, 2002

Programmable impedance control circuit and method thereof

SAMSUNG ELECTRONICS CO LTD50 citations93
US6594818B2Jul 15, 2003

Memory architecture permitting selection of storage density after fabrication of active circuitry

SAMSUNG ELECTRONICS CO LTD34 citations92
US7307441B2Dec 11, 2007

Integrated circuit chips and wafers including on-chip test element group circuits, and methods of fabricating and testing same

SAMSUNG ELECTRONICS CO LTD25 citations90
US6901014B2May 31, 2005

Circuits and methods for screening for defective memory cells in semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD47 citations90
US7924604B2Apr 12, 2011

Stacked memory cell for use in high-density CMOS SRAM

SAMSUNG ELECTRONICS CO LTD8 citations84
US7825710B2Nov 2, 2010

Delay-locked loop circuits and method for generating transmission core clock signals

SAMSUNG ELECTRONICS CO LTD15 citations84
US7616512B2Nov 10, 2009

Semiconductor memory device with hierarchical bit line structure

SAMSUNG ELECTRONICS CO LTD10 citations84
US7295489B2Nov 13, 2007

Method and circuit for writing double data rate (DDR) sampled data in a memory device

SAMSUNG ELECTRONICS CO LTD13 citations84
US7170318B2Jan 30, 2007

Impedance controller and impedance control method

SAMSUNG ELECTRONICS CO LTD10 citations84
US7016257B2Mar 21, 2006

Semiconductor memory device capable of generating variable clock signals according to modes of operation

SAMSUNG ELECTRONICS CO LTD12 citations84
US6617894B2Sep 9, 2003

Circuits and methods for generating internal clock signal of intermediate phase relative to external clock

SAMSUNG ELECTRONICS CO LTD16 citations84
US6583647B2Jun 24, 2003

Signal converting system having level converter for use in high speed semiconductor device and method therefor

SAMSUNG ELECTRONICS CO LTD13 citations84
US6556038B2Apr 29, 2003

Impedance updating apparatus of termination circuit and impedance updating method thereof

SAMSUNG ELECTRONICS CO LTD17 citations84
US9318607B2Apr 19, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations83
US7002822B2Feb 21, 2006

Content addressable memory device

SAMSUNG ELECTRONICS CO LTD13 citations83
US6785173B2Aug 31, 2004

Semiconductor memory device capable of performing high-frequency wafer test operation

SAMSUNG ELECTRONICS CO LTD13 citations82
US7551013B2Jun 23, 2009

Phase interpolation circuit and method of generating phase interpolation signal

SAMSUNG ELECTRONICS CO LTD7 citations74
US6930508B2Aug 16, 2005

Integrated circuit with on-chip termination

SAMSUNG ELECTRONICS CO LTD7 citations74
US7697314B2Apr 13, 2010

Data line layout and line driving method in semiconductor memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7656723B2Feb 2, 2010

Semiconductor memory device with hierarchical bit line structure

SAMSUNG ELECTRONICS CO LTD2 citations63
US7454672B2Nov 18, 2008

Semiconductor memory device testable with a single data rate and/or dual data rate pattern in a merged data input/output pin test mode

SAMSUNG ELECTRONICS CO LTD4 citations63
US7154312B2Dec 26, 2006

Apparatus for generating internal clock signal

SAMSUNG ELECTRONICS CO LTD2 citations63
US6992514B2Jan 31, 2006

Synchronous mirror delay circuit and semiconductor integrated circuit device having the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US6628155B2Sep 30, 2003

Internal clock generating circuit of semiconductor memory device and method thereof

SAMSUNG ELECTRONICS CO LTD5 citations63
US5680062AOct 21, 1997

Gunn transceiver logic input circuit for use in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD6 citations63
US7548086B2Jun 16, 2009

Impedance control circuit in semiconductor device and impedance control method

SAMSUNG ELECTRONICS CO LTD2 citations61
US7385414B2Jun 10, 2008

Impedance controllable ouput drive circuit in semiconductor device and impedance control method therefor

SAMSUNG ELECTRONICS CO LTD5 citations61
US5173760ADec 22, 1992

BiCMOS semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations60
US4912055AMar 27, 1990

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD7 citations60
US11437320B2Sep 6, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations59
US4970174ANov 13, 1990

Method for making a BiCMOS semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations58
US7400177B2Jul 15, 2008

Amplifier circuit having constant output swing range and stable delay time

SAMSUNG ELECTRONICS CO LTD1 citations52
US7187214B2Mar 6, 2007

Amplifier circuit having constant output swing range and stable delay time

SAMSUNG ELECTRONICS CO LTD1 citations52
US7274580B2Sep 25, 2007

Content addressable memory device

SAMSUNG ELECTRONICS CO LTD1 citations51
US6815230B2Nov 9, 2004

Control signal transmitting method with package power pin and related integrated circuit package structure

SAMSUNG ELECTRONICS CO LTD0 citations51
US9537470B2Jan 3, 2017

Semiconductor device and method for operating the same

SAMSUNG ELECTRONICS CO LTD1 citations49
US9130550B2Sep 8, 2015

Semiconductor device and method for operating the same

SAMSUNG ELECTRONICS CO LTD1 citations49
US7471109B2Dec 30, 2008

Output impedance circuit and output buffer circuit including the same

SAMSUNG ELECTRONICS CO LTD0 citations42

SAMSUNG ELECTRONICS LTD

1 patent

JUNG GUN OK

1 patent

SON YOUNG-JAE

1 patent