Inventor
CHOI WON-BONG
KR25 patents
⚠️ This page may combine multiple inventors who share the name “CHOI WON-BONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7005391B2Feb 28, 2006
Method of manufacturing inorganic nanotube
SAMSUNG ELECTRONICS CO LTD521 citations99
US6566704B2May 20, 2003
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD255 citations99
US7015500B2Mar 21, 2006
Memory device utilizing carbon nanotubes
SAMSUNG ELECTRONICS CO LTD215 citations98
US6855603B2Feb 15, 2005
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD68 citations98
US6949793B2Sep 27, 2005
Memory device with quantum dot and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD50 citations96
US6833567B2Dec 21, 2004
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD42 citations96
US7378328B2May 27, 2008
Method of fabricating memory device utilizing carbon nanotubes
SAMSUNG ELECTRONICS CO LTD18 citations92
US7060543B2Jun 13, 2006
Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method
SAMSUNG ELECTRONICS CO LTD15 citations92
US6998634B2Feb 14, 2006
Memory device utilizing vertical nanotubes
SAMSUNG ELECTRONICS CO LTD48 citations92
US6930343B2Aug 16, 2005
Nonvolatile memory device utilizing a vertical nanotube
SAMSUNG ELECTRONICS CO LTD28 citations92
US6815294B2Nov 9, 2004
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD32 citations92
US7326605B2Feb 5, 2008
Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7247897B2Jul 24, 2007
Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured
SAMSUNG ELECTRONICS CO LTD11 citations84
US7355951B2Apr 8, 2008
High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system
SAMSUNG ELECTRONICS CO LTD7 citations74
US7259068B2Aug 21, 2007
Memory device with quantum dot and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7405126B2Jul 29, 2008
Memory device with quantum dot and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6687210B2Feb 3, 2004
High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
SAMSUNG SDI CO LTD
5 patentsUS6440761B1Aug 27, 2002
Carbon nanotube field emission array and method for fabricating the same
SAMSUNG SDI CO LTD145 citations98
US6616497B1Sep 9, 2003
Method of manufacturing carbon nanotube field emitter by electrophoretic deposition
SAMSUNG SDI CO LTD89 citations95
US6976897B2Dec 20, 2005
Field emission array with carbon nanotubes and method for fabricating the field emission array
SAMSUNG SDI CO LTD35 citations90
US6642639B2Nov 4, 2003
Field emission array with carbon nanotubes
SAMSUNG SDI CO LTD23 citations90
US7585584B2Sep 8, 2009
Carbon nanotubes for fuel cells, method for manufacturing the same, and fuel cell using the same
SAMSUNG SDI CO LTD9 citations83
CHOI WON-BONG
2 patentsUS8083905B2Dec 27, 2011
Carbon nanotubes for fuel cells, method for manufacturing the same, and fuel cell using the same
CHOI WON-BONG23 citations90
US8658484B2Feb 25, 2014
Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same
CHOI WON-BONG0 citations50