Inventor
JOO HEUNG-JIN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “JOO HEUNG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
13 patentsUS6979881B2Dec 27, 2005
Ferroelectric integrated circuit devices having an oxygen penetration path
SAMSUNG ELECTRONICS CO LTD16 citations92
US7348616B2Mar 25, 2008
Ferroelectric integrated circuit devices having an oxygen penetration path
SAMSUNG ELECTRONICS CO LTD7 citations73
US7294876B2Nov 13, 2007
FeRAM device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US7105418B2Sep 12, 2006
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
SAMSUNG ELECTRONICS CO LTD5 citations73
US7052951B2May 30, 2006
Ferroelectric memory devices with enhanced ferroelectric properties and methods for fabricating such memory devices
SAMSUNG ELECTRONICS CO LTD7 citations73
US10529736B2Jan 7, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations71
US10937797B2Mar 2, 2021
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations66
US7586774B2Sep 8, 2009
Stacked ferroelectric memory devices, methods of manufacturing the same, ferroelectric memory circuits and methods of driving the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7495311B2Feb 24, 2009
Semiconductor devices having a metal-insulator-metal capacitor and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7262453B2Aug 28, 2007
Multiple stacked capacitors formed within an opening with thick capacitor dielectric
SAMSUNG ELECTRONICS CO LTD2 citations62
US6911362B2Jun 28, 2005
Methods for forming electronic devices including capacitor structures
SAMSUNG ELECTRONICS CO LTD6 citations62
US10896917B2Jan 19, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US7144772B2Dec 5, 2006
Semiconductor devices having capacitors of metal-insulator-metal structure with coextensive oxidation barrier pattern and lower electrode bottom and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations58