Inventor
SHIN JIN-HYUN
KR14 patents
⚠️ This page may combine multiple inventors who share the name “SHIN JIN-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS6927447B2Aug 9, 2005
Flash memory devices having a sloped trench isolation structure
SAMSUNG ELECTRONICS CO LTD20 citations92
US6939780B2Sep 6, 2005
Methods of forming trench isolated integrated circuit devices including grooves
SAMSUNG ELECTRONICS CO LTD26 citations91
US6969650B2Nov 29, 2005
Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways
SAMSUNG ELECTRONICS CO LTD10 citations72
US10600805B2Mar 24, 2020
Vertical memory devices with common source including alternately repeated portions having different widths
SAMSUNG ELECTRONICS CO LTD5 citations69
US9379122B2Jun 28, 2016
Memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations68
US7592665B2Sep 22, 2009
Non-volatile memory devices having floating gates
SAMSUNG ELECTRONICS CO LTD5 citations63
US7494868B2Feb 24, 2009
Methods of fabricating flash memory devices having a sloped trench isolation structure
SAMSUNG ELECTRONICS CO LTD4 citations62
US7391082B2Jun 24, 2008
Semiconductor integrated circuit having resistor
SAMSUNG ELECTRONICS CO LTD6 citations62
US9330931B2May 3, 2016
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations61
US7518210B2Apr 14, 2009
Trench isolated integrated circuit devices including grooves
SAMSUNG ELECTRONICS CO LTD3 citations61