P

Inventor

KOTHANDARAMAN CHANDRASEKHARAN

US124 patents
⚠️ This page may combine multiple inventors who share the name “KOTHANDARAMAN CHANDRASEKHARAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

39 patents
US7388273B2Jun 17, 2008

Reprogrammable fuse structure and method

IBM73 citations98
US9647200B1May 9, 2017

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

IBM21 citations94
US7714326B2May 11, 2010

Electrical antifuse with integrated sensor

IBM47 citations94
US8030736B2Oct 4, 2011

Fin anti-fuse with reduced programming voltage

IBM20 citations93
US7982285B2Jul 19, 2011

Antifuse structure having an integrated heating element

IBM14 citations93
US7633079B2Dec 15, 2009

Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material

IBM26 citations93
US7442583B2Oct 28, 2008

Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable

IBM21 citations93
US7336095B2Feb 26, 2008

Changing chip function based on fuse states

IBM31 citations93
US7268577B2Sep 11, 2007

Changing chip function based on fuse states

IBM21 citations93
US9495627B1Nov 15, 2016

Magnetic tunnel junction based chip identification

IBM14 citations92
US9025386B1May 5, 2015

Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology

IBM27 citations92
US6368902B1Apr 9, 2002

Enhanced efuses by the local degradation of the fuse link

IBM77 citations91
US11980039B2May 7, 2024

Wide-base magnetic tunnel junction device with sidewall polymer spacer

IBM7 citations86
US10008536B2Jun 26, 2018

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

IBM6 citations84
US10002904B2Jun 19, 2018

Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material

IBM5 citations84
US9653679B1May 16, 2017

Magnetoresistive structures with stressed layer

IBM8 citations84
US9601686B1Mar 21, 2017

Magnetoresistive structures with stressed layer

IBM7 citations84
US9397287B1Jul 19, 2016

Magnetic tunnel junction with post-deposition hydrogenation

IBM16 citations84
US9208878B2Dec 8, 2015

Non-volatile memory based on retention modulation

IBM19 citations84
US8004059B2Aug 23, 2011

eFuse containing SiGe stack

IBM10 citations84
US7960808B2Jun 14, 2011

Reprogrammable fuse structure and method

IBM8 citations84
US7960809B2Jun 14, 2011

eFuse with partial SiGe layer and design structure therefor

IBM10 citations84
US7880266B2Feb 1, 2011

Four-terminal antifuse structure having integrated heating elements for a programmable circuit

IBM8 citations84
US7750335B2Jul 6, 2010

Phase change material structure and related method

IBM16 citations84
US7732893B2Jun 8, 2010

Electrical fuse structure for higher post-programming resistance

IBM10 citations84
US7550789B2Jun 23, 2009

Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable

IBM13 citations84
US7504875B2Mar 17, 2009

Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuit

IBM10 citations84
US7485944B2Feb 3, 2009

Programmable electronic fuse

IBM20 citations84
US7295057B2Nov 13, 2007

Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuit

IBM11 citations84
US7242072B2Jul 10, 2007

Electrically programmable fuse for silicon-on-insulator (SOI) technology

IBM15 citations84
US7227207B2Jun 5, 2007

Dense semiconductor fuse array

IBM11 citations84
US7745855B2Jun 29, 2010

Single crystal fuse on air in bulk silicon

IBM7 citations74
US11778921B2Oct 3, 2023

Double magnetic tunnel junction device

IBM2 citations73
US11563054B2Jan 24, 2023

MJT based anti-fuses with low programming voltage

IBM2 citations73
US10957738B2Mar 23, 2021

Magnetic random access memory (MRAM) structure with small bottom electrode

IBM4 citations73
US10937828B2Mar 2, 2021

Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile

IBM2 citations73
US10741752B2Aug 11, 2020

Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices

IBM1 citations73
US10374152B2Aug 6, 2019

Magnetic tunnel junction based anti-fuses with cascoded transistors

IBM2 citations73
US9721646B1Aug 1, 2017

Prevention of SRAM burn-in

IBM3 citations73

INFINEON TECHNOLOGIES AG

7 patents

KIM DEOK-KEE

1 patent

GLOBALFOUNDRIES US 2 LLC

1 patent

COOLBAUGH DOUGLAS D

1 patent

FAINSTEIN DANIEL JACOB

1 patent

Showing the top 50 of 124 patents by PatentIndex Score.