Inventor
KOTHANDARAMAN CHANDRASEKHARAN
US124 patents
⚠️ This page may combine multiple inventors who share the name “KOTHANDARAMAN CHANDRASEKHARAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
39 patentsUS7388273B2Jun 17, 2008
Reprogrammable fuse structure and method
IBM73 citations98
US9647200B1May 9, 2017
Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
IBM21 citations94
US7714326B2May 11, 2010
Electrical antifuse with integrated sensor
IBM47 citations94
US8030736B2Oct 4, 2011
Fin anti-fuse with reduced programming voltage
IBM20 citations93
US7982285B2Jul 19, 2011
Antifuse structure having an integrated heating element
IBM14 citations93
US7633079B2Dec 15, 2009
Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material
IBM26 citations93
US7442583B2Oct 28, 2008
Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
IBM21 citations93
US7336095B2Feb 26, 2008
Changing chip function based on fuse states
IBM31 citations93
US7268577B2Sep 11, 2007
Changing chip function based on fuse states
IBM21 citations93
US9495627B1Nov 15, 2016
Magnetic tunnel junction based chip identification
IBM14 citations92
US9025386B1May 5, 2015
Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
IBM27 citations92
US6368902B1Apr 9, 2002
Enhanced efuses by the local degradation of the fuse link
IBM77 citations91
US11980039B2May 7, 2024
Wide-base magnetic tunnel junction device with sidewall polymer spacer
IBM7 citations86
US10008536B2Jun 26, 2018
Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
IBM6 citations84
US10002904B2Jun 19, 2018
Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
IBM5 citations84
US9653679B1May 16, 2017
Magnetoresistive structures with stressed layer
IBM8 citations84
US9601686B1Mar 21, 2017
Magnetoresistive structures with stressed layer
IBM7 citations84
US9397287B1Jul 19, 2016
Magnetic tunnel junction with post-deposition hydrogenation
IBM16 citations84
US9208878B2Dec 8, 2015
Non-volatile memory based on retention modulation
IBM19 citations84
US8004059B2Aug 23, 2011
eFuse containing SiGe stack
IBM10 citations84
US7960808B2Jun 14, 2011
Reprogrammable fuse structure and method
IBM8 citations84
US7960809B2Jun 14, 2011
eFuse with partial SiGe layer and design structure therefor
IBM10 citations84
US7880266B2Feb 1, 2011
Four-terminal antifuse structure having integrated heating elements for a programmable circuit
IBM8 citations84
US7750335B2Jul 6, 2010
Phase change material structure and related method
IBM16 citations84
US7732893B2Jun 8, 2010
Electrical fuse structure for higher post-programming resistance
IBM10 citations84
US7550789B2Jun 23, 2009
Using electrically programmable fuses to hide architecture, prevent reverse engineering, and make a device inoperable
IBM13 citations84
US7504875B2Mar 17, 2009
Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuit
IBM10 citations84
US7485944B2Feb 3, 2009
Programmable electronic fuse
IBM20 citations84
US7295057B2Nov 13, 2007
Methods and apparatus for characterizing electronic fuses used to personalize an integrated circuit
IBM11 citations84
US7242072B2Jul 10, 2007
Electrically programmable fuse for silicon-on-insulator (SOI) technology
IBM15 citations84
US7227207B2Jun 5, 2007
Dense semiconductor fuse array
IBM11 citations84
US7745855B2Jun 29, 2010
Single crystal fuse on air in bulk silicon
IBM7 citations74
US11778921B2Oct 3, 2023
Double magnetic tunnel junction device
IBM2 citations73
US11563054B2Jan 24, 2023
MJT based anti-fuses with low programming voltage
IBM2 citations73
US10957738B2Mar 23, 2021
Magnetic random access memory (MRAM) structure with small bottom electrode
IBM4 citations73
US10937828B2Mar 2, 2021
Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile
IBM2 citations73
US10741752B2Aug 11, 2020
Sub-lithographic magnetic tunnel junctions for magnetic random access memory devices
IBM1 citations73
US10374152B2Aug 6, 2019
Magnetic tunnel junction based anti-fuses with cascoded transistors
IBM2 citations73
US9721646B1Aug 1, 2017
Prevention of SRAM burn-in
IBM3 citations73
INFINEON TECHNOLOGIES AG
7 patentsUS6624499B2Sep 23, 2003
System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
INFINEON TECHNOLOGIES AG158 citations98
US6913954B2Jul 5, 2005
Programmable fuse device
INFINEON TECHNOLOGIES AG28 citations93
US6617914B1Sep 9, 2003
Electrical antifuse with external capacitance
INFINEON TECHNOLOGIES AG50 citations93
US6710640B1Mar 23, 2004
Active well-bias transistor for programming a fuse
INFINEON TECHNOLOGIES AG30 citations92
US6432760B1Aug 13, 2002
Method and structure to reduce the damage associated with programming electrical fuses
INFINEON TECHNOLOGIES AG44 citations91
US7075127B2Jul 11, 2006
Single-poly 2-transistor based fuse element
INFINEON TECHNOLOGIES AG17 citations84
US6828652B2Dec 7, 2004
Fuse structure for semiconductor device
INFINEON TECHNOLOGIES AG12 citations74
KIM DEOK-KEE
1 patentGLOBALFOUNDRIES US 2 LLC
1 patentCOOLBAUGH DOUGLAS D
1 patentFAINSTEIN DANIEL JACOB
1 patentShowing the top 50 of 124 patents by PatentIndex Score.