Inventor

NAKANISHI TOSHIO

JP52 patents

⚠️ This page may combine multiple inventors who share the name “NAKANISHI TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NAKANISHI TOSHIO

TOKYO ELECTRON LTD

Plasma cleaning method and plasma CVD method

Substrate processing method

Method of producing electronic device material

Method for forming insulating film and method for manufacturing semiconductor device

Apparatus and method for microwave plasma process

Plasma processing method and computer storage medium

Method of forming gate insulating film, semiconductor device and computer recording medium

Method for forming insulation film

Nitriding method of gate oxide film

Substrate processing method and material for electronic device

Substrate processing method

Process for producing materials for electronic device

Processing method of silicon nitride film and forming method of silicon nitride film

Method for nitriding substrate and method for forming insulating film

Method of modifying insulating film

RLSA CVD deposition control using halogen gas for hydrogen scavenging

Method for forming insulation film

Method of modifying insulating film

Method for forming underlying insulation film

Plasma processing method and computer storage medium

Forming method and forming system for insulation film

Forming system for insulation film

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

Plasma film-forming apparatus and substrate pedestal

Plasma film-forming method and plasma film-forming apparatus

Plasma processing method and plasma processing apparatus

HONDA MINORU

Method for forming insulating film and method for manufacturing semiconductor device

Method for forming insulating film and method for manufacturing semiconductor device

Forming a silicon nitride film by plasma CVD

SUMITOMO METAL IND

Electrostatic chuck and the method of operating the same

Apparatus and method for microwave plasma process

ASM IP HOLDING BV

Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition

Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition

ENDOH TETSUO

MOS semiconductor memory device having charge storage region formed from stack of insulating films

Forming a MOS memory device having a dielectric film laminate as a charge accumulation region

NGK SPARK PLUG CO

Modular measurement apparatus

Particulate measurement apparatus and particulate measurement system

KUBOTA KK

Engine

EGR device

KOHNO MASAYUKI

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device

HOUYU CO LTD

Electronic game housing

MATSUSHITA ELECTRIC WORKS LTD

Method of manufacturing artificial wood veneer

MITSUBISHI ELECTRIC CORP

Rotor for dynamo-electric machine

KOSAKA TETSUYA

Internal combustion engine

DAIKI ALUMINIUM IND

Slag crushing device

NEC CORP

Electronic device package

UNIV TOHOKU

Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatus

TOYKO ELECTRON LTD

Method of forming gate insulation film, semiconductor device, and computer recording medium

MATSUYAMA SEIJI

Plasma processing method