P

Inventor

MATSUYAMA SEIJI

JP24 patents
⚠️ This page may combine multiple inventors who share the name “MATSUYAMA SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

16 patents
US7226874B2Jun 5, 2007

Substrate processing method

TOKYO ELECTRON LTD24 citations92
US6897149B2May 24, 2005

Method of producing electronic device material

TOKYO ELECTRON LTD24 citations92
US7226848B2Jun 5, 2007

Substrate treating method and production method for semiconductor device

TOKYO ELECTRON LTD11 citations84
US7723241B2May 25, 2010

Plasma processing method and computer storage medium

TOKYO ELECTRON LTD8 citations83
US7446052B2Nov 4, 2008

Method for forming insulation film

TOKYO ELECTRON LTD10 citations82
US7429539B2Sep 30, 2008

Nitriding method of gate oxide film

TOKYO ELECTRON LTD7 citations74
US7250375B2Jul 31, 2007

Substrate processing method and material for electronic device

TOKYO ELECTRON LTD9 citations74
US7232772B2Jun 19, 2007

Substrate processing method

TOKYO ELECTRON LTD7 citations74
US7217659B2May 15, 2007

Process for producing materials for electronic device

TOKYO ELECTRON LTD5 citations73
US7517751B2Apr 14, 2009

Substrate treating method

TOKYO ELECTRON LTD2 citations63
US8021987B2Sep 20, 2011

Method of modifying insulating film

TOKYO ELECTRON LTD3 citations62
US7662236B2Feb 16, 2010

Method for forming insulation film

TOKYO ELECTRON LTD3 citations62
US7655574B2Feb 2, 2010

Method of modifying insulating film

TOKYO ELECTRON LTD3 citations62
US7622402B2Nov 24, 2009

Method for forming underlying insulation film

TOKYO ELECTRON LTD2 citations62
US7897518B2Mar 1, 2011

Plasma processing method and computer storage medium

TOKYO ELECTRON LTD4 citations61
US7759598B2Jul 20, 2010

Substrate treating method and production method for semiconductor device

TOKYO ELECTRON LTD0 citations52

LAM RES CORP

5 patents

MATSUYAMA SEIJI

2 patents

PANASONIC CORP

1 patent