Inventor

GO DOHYUN

KR3 patents

Patents

3 patents

US12324195B2Jun 3, 2025

Multi-channel field effect transistors with enhanced multi-layered source/drain regions

SAMSUNG ELECTRONICS CO LTD1 citations62

US12414337B2Sep 9, 2025

Semiconductor device including reflow layers

SAMSUNG ELECTRONICS CO LTD0 citations49

US12543346B2Feb 3, 2026

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations43