Inventor
WU CHEN-BAU
TW22 patents
⚠️ This page may combine multiple inventors who share the name “WU CHEN-BAU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
13 patentsUS7221021B2May 22, 2007
Method of forming high voltage devices with retrograde well
TAIWAN SEMICONDUCTOR MFG120 citations98
US7151296B2Dec 19, 2006
High voltage lateral diffused MOSFET device
TAIWAN SEMICONDUCTOR MFG19 citations92
US7129559B2Oct 31, 2006
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG20 citations92
US7372104B2May 13, 2008
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG22 citations91
US5899738AMay 4, 1999
Method for making metal plugs in stacked vias for multilevel interconnections and contact openings while retaining the alignment marks without requiring extra masking steps
TAIWAN SEMICONDUCTOR MFG39 citations89
US7719064B2May 18, 2010
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG8 citations82
US7482662B2Jan 27, 2009
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG5 citations73
US7279767B2Oct 9, 2007
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG5 citations70
US8049295B2Nov 1, 2011
Coupling well structure for improving HVMOS performance
TAIWAN SEMICONDUCTOR MFG2 citations62
US7888767B2Feb 15, 2011
Structures of high-voltage MOS devices with improved electrical performance
TAIWAN SEMICONDUCTOR MFG4 citations61
US9111957B2Aug 18, 2015
Coupling well structure for improving HVMOS performance
TAIWAN SEMICONDUCTOR MFG0 citations51
US7816214B2Oct 19, 2010
Coupling well structure for improving HVMOS performance
TAIWAN SEMICONDUCTOR MFG0 citations51
US7521342B2Apr 21, 2009
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG1 citations49
TAIWAN SEMICONDUCTOR MFG CO LTD
6 patentsUS11139290B2Oct 5, 2021
High voltage cascode HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11195945B2Dec 7, 2021
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12363938B2Jul 15, 2025
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12100757B2Sep 24, 2024
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742419B2Aug 29, 2023
Cap structure coupled to source to reduce saturation current in HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12451419B2Oct 21, 2025
Wafer-on-wafer cascode HEMT device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50