Inventor
HSU SHUN-LIANG
TW47 patents
⚠️ This page may combine multiple inventors who share the name “HSU SHUN-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
41 patentsUS5757045AMay 26, 1998
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation
TAIWAN SEMICONDUCTOR MFG210 citations99
US7221021B2May 22, 2007
Method of forming high voltage devices with retrograde well
TAIWAN SEMICONDUCTOR MFG120 citations98
US5691212ANov 25, 1997
MOS device structure and integration method
TAIWAN SEMICONDUCTOR MFG123 citations98
US5668024ASep 16, 1997
CMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation process
TAIWAN SEMICONDUCTOR MFG102 citations98
US5597442AJan 28, 1997
Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature
TAIWAN SEMICONDUCTOR MFG129 citations97
US6756294B1Jun 29, 2004
Method for improving bump reliability for flip chip devices
TAIWAN SEMICONDUCTOR MFG53 citations96
US5872042AFeb 16, 1999
Method for alignment mark regeneration
TAIWAN SEMICONDUCTOR MFG70 citations96
US5705320AJan 6, 1998
Recovery of alignment marks and laser marks after chemical-mechanical-polishing
TAIWAN SEMICONDUCTOR MFG63 citations96
US5702972ADec 30, 1997
Method of fabricating MOSFET devices
TAIWAN SEMICONDUCTOR MFG59 citations96
US5530418AJun 25, 1996
Method for shielding polysilicon resistors from hydrogen intrusion
TAIWAN SEMICONDUCTOR MFG63 citations96
US6593220B1Jul 15, 2003
Elastomer plating mask sealed wafer level package method
TAIWAN SEMICONDUCTOR MFG144 citations95
US5804488ASep 8, 1998
Method of forming a tungsten silicide capacitor having a high breakdown voltage
TAIWAN SEMICONDUCTOR MFG73 citations95
US5480828AJan 2, 1996
Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process
TAIWAN SEMICONDUCTOR MFG103 citations94
US5972777AOct 26, 1999
Method of forming isolation by nitrogen implant to reduce bird's beak
TAIWAN SEMICONDUCTOR MFG24 citations93
US5460993AOct 24, 1995
Method of making NMOS and PMOS LDD transistors utilizing thinned sidewall spacers
TAIWAN SEMICONDUCTOR MFG48 citations93
US7129559B2Oct 31, 2006
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG20 citations92
US5866947AFeb 2, 1999
Post tungsten etch bank anneal, to improve aluminum step coverage
TAIWAN SEMICONDUCTOR MFG20 citations92
US5858854AJan 12, 1999
Method for forming high contrast alignment marks
TAIWAN SEMICONDUCTOR MFG27 citations92
US5554558ASep 10, 1996
Method of making high precision w-polycide-to-poly capacitors in digital/analog process
TAIWAN SEMICONDUCTOR MFG25 citations92
US7372104B2May 13, 2008
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG22 citations91
US7122876B2Oct 17, 2006
Isolation-region configuration for integrated-circuit transistor
TAIWAN SEMICONDUCTOR MFG22 citations91
US5451529ASep 19, 1995
Method of making a real time ion implantation metal silicide monitor
TAIWAN SEMICONDUCTOR MFG37 citations91
US5338701AAug 16, 1994
Method for fabrication of w-polycide-to-poly capacitors with high linearity
TAIWAN SEMICONDUCTOR MFG33 citations89
US6338976B1Jan 15, 2002
Method for forming optoelectronic microelectronic fabrication with attenuated bond pad corrosion
TAIWAN SEMICONDUCTOR MFG23 citations88
US5108937AApr 28, 1992
Method of making a recessed gate MOSFET device structure
TAIWAN SEMICONDUCTOR MFG51 citations87
US7719064B2May 18, 2010
High voltage CMOS devices
TAIWAN SEMICONDUCTOR MFG8 citations82
US7521741B2Apr 21, 2009
Shielding structures for preventing leakages in high voltage MOS devices
TAIWAN SEMICONDUCTOR MFG9 citations82
US7476591B2Jan 13, 2009
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations74
US6100154AAug 8, 2000
Using LPCVD silicon nitride cap as a barrier to reduce resistance variations from hydrogen intrusion of high-value polysilicon resistor
TAIWAN SEMICONDUCTOR MFG8 citations74
US5726091AMar 10, 1998
Method of reducing bird's beak of field oxide using reoxidized nitrided pad oxide layer
TAIWAN SEMICONDUCTOR MFG7 citations74
US7989890B2Aug 2, 2011
Lateral power MOSFET with high breakdown voltage and low on-resistance
TAIWAN SEMICONDUCTOR MFG6 citations73
US7482662B2Jan 27, 2009
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG5 citations73
US6348371B1Feb 19, 2002
Method of forming self-aligned twin wells
TAIWAN SEMICONDUCTOR MFG13 citations73
US5641710AJun 24, 1997
Post tungsten etch back anneal, to improve aluminum step coverage
TAIWAN SEMICONDUCTOR MFG10 citations73
US6291306B1Sep 18, 2001
Method of improving the voltage coefficient of resistance of high polysilicon resistors
TAIWAN SEMICONDUCTOR MFG9 citations72
US7279767B2Oct 9, 2007
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG5 citations70
US7079412B2Jul 18, 2006
Programmable MOS device formed by stressing polycrystalline silicon
TAIWAN SEMICONDUCTOR MFG5 citations63
US7384836B2Jun 10, 2008
Integrated circuit transistor insulating region fabrication method
TAIWAN SEMICONDUCTOR MFG2 citations61
US7714414B2May 11, 2010
Method and apparatus for polymer dielectric surface recovery by ion implantation
TAIWAN SEMICONDUCTOR MFG0 citations51
US7521342B2Apr 21, 2009
Semiconductor structure with high-voltage sustaining capability and fabrication method of the same
TAIWAN SEMICONDUCTOR MFG1 citations49
US7911022B2Mar 22, 2011
Isolation structure in field device
TAIWAN SEMICONDUCTOR MFG0 citations41