P

Inventor

FUKUHARA NOBORU

JP31 patents
⚠️ This page may combine multiple inventors who share the name “FUKUHARA NOBORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO CHEMICAL CO

24 patents
US5603764AFeb 18, 1997

Process for crystal growth of III-V group compound semiconductor

SUMITOMO CHEMICAL CO54 citations94
US5708301AJan 13, 1998

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO17 citations92
US5332451AJul 26, 1994

Epitaxially grown compound-semiconductor crystal

SUMITOMO CHEMICAL CO21 citations92
US6744078B2Jun 1, 2004

Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers

SUMITOMO CHEMICAL CO7 citations74
US5569954AOct 29, 1996

Epitaxial Inx Ga.sub.(1-x) As having a slanted crystallographic plane azimuth

SUMITOMO CHEMICAL CO8 citations72
US9755040B2Sep 5, 2017

Semiconductor wafer, method of producing semiconductor wafer and electronic device

SUMITOMO CHEMICAL CO3 citations71
US4976216ADec 11, 1990

Apparatus for vapor-phase growth

SUMITOMO CHEMICAL CO14 citations71
US6388323B1May 14, 2002

Electrode material and electrode for III-V group compound semiconductor

SUMITOMO CHEMICAL CO3 citations63
US12283487B2Apr 22, 2025

Method for manufacturing structure

SUMITOMO CHEMICAL CO0 citations62
US12112945B2Oct 8, 2024

Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device

SUMITOMO CHEMICAL CO0 citations62
US12054847B2Aug 6, 2024

Method and device for manufacturing structure

SUMITOMO CHEMICAL CO0 citations62
US11756827B2Sep 12, 2023

Structure manufacturing method and manufacturing device, and light irradiation device

SUMITOMO CHEMICAL CO0 citations62
US11114296B2Sep 7, 2021

Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device

SUMITOMO CHEMICAL CO0 citations62
US5441913AAug 15, 1995

Process of making a semiconductor epitaxial substrate

SUMITOMO CHEMICAL CO3 citations61
US5064778ANov 12, 1991

Vapor-phase epitaxial growth method

SUMITOMO CHEMICAL CO2 citations58
US12002880B2Jun 4, 2024

Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor

SUMITOMO CHEMICAL CO0 citations52
US7923752B2Apr 12, 2011

Thin-film crystal wafer having pn junction and method for fabricating the wafer

SUMITOMO CHEMICAL CO0 citations52
US7576352B2Aug 18, 2009

Method for producing compound semiconductor wafer and compound semiconductor device

SUMITOMO CHEMICAL CO0 citations52
US7304332B2Dec 4, 2007

Compound semiconductor epitaxial substrate and method for manufacturing same

SUMITOMO CHEMICAL CO0 citations52
US8901656B2Dec 2, 2014

Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor

SUMITOMO CHEMICAL CO1 citations51
US7550786B2Jun 23, 2009

Compound semiconductor epitaxial substrate

SUMITOMO CHEMICAL CO0 citations51
US7291873B2Nov 6, 2007

High electron mobility epitaxial substrate

SUMITOMO CHEMICAL CO1 citations51
US9379226B2Jun 28, 2016

Semiconductor wafer and insulated gate field effect transistor

SUMITOMO CHEMICAL CO0 citations41
US8803197B2Aug 12, 2014

Semiconductor wafer, insulated gate field effect transistor, and method for producing semiconductor wafer

SUMITOMO CHEMICAL CO0 citations41

SCIOCS CO LTD

3 patents

YAMANAKA SADANORI

1 patent

SUMIKA EPI SOLUTION COMPANY LT

1 patent

FUKUHARA NOBORU

1 patent

HATA MASAHIKO

1 patent