Inventor
FUKUHARA NOBORU
JP31 patents
⚠️ This page may combine multiple inventors who share the name “FUKUHARA NOBORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO CHEMICAL CO
24 patentsUS5603764AFeb 18, 1997
Process for crystal growth of III-V group compound semiconductor
SUMITOMO CHEMICAL CO54 citations94
US5708301AJan 13, 1998
Electrode material and electrode for III-V group compound semiconductor
SUMITOMO CHEMICAL CO17 citations92
US5332451AJul 26, 1994
Epitaxially grown compound-semiconductor crystal
SUMITOMO CHEMICAL CO21 citations92
US6744078B2Jun 1, 2004
Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers
SUMITOMO CHEMICAL CO7 citations74
US5569954AOct 29, 1996
Epitaxial Inx Ga.sub.(1-x) As having a slanted crystallographic plane azimuth
SUMITOMO CHEMICAL CO8 citations72
US9755040B2Sep 5, 2017
Semiconductor wafer, method of producing semiconductor wafer and electronic device
SUMITOMO CHEMICAL CO3 citations71
US4976216ADec 11, 1990
Apparatus for vapor-phase growth
SUMITOMO CHEMICAL CO14 citations71
US6388323B1May 14, 2002
Electrode material and electrode for III-V group compound semiconductor
SUMITOMO CHEMICAL CO3 citations63
US12283487B2Apr 22, 2025
Method for manufacturing structure
SUMITOMO CHEMICAL CO0 citations62
US12112945B2Oct 8, 2024
Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device
SUMITOMO CHEMICAL CO0 citations62
US12054847B2Aug 6, 2024
Method and device for manufacturing structure
SUMITOMO CHEMICAL CO0 citations62
US11756827B2Sep 12, 2023
Structure manufacturing method and manufacturing device, and light irradiation device
SUMITOMO CHEMICAL CO0 citations62
US11114296B2Sep 7, 2021
Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device
SUMITOMO CHEMICAL CO0 citations62
US5441913AAug 15, 1995
Process of making a semiconductor epitaxial substrate
SUMITOMO CHEMICAL CO3 citations61
US5064778ANov 12, 1991
Vapor-phase epitaxial growth method
SUMITOMO CHEMICAL CO2 citations58
US12002880B2Jun 4, 2024
Method for manufacturing nitride-based high electron mobility transistor and nitride-based high electron mobility transistor
SUMITOMO CHEMICAL CO0 citations52
US7923752B2Apr 12, 2011
Thin-film crystal wafer having pn junction and method for fabricating the wafer
SUMITOMO CHEMICAL CO0 citations52
US7576352B2Aug 18, 2009
Method for producing compound semiconductor wafer and compound semiconductor device
SUMITOMO CHEMICAL CO0 citations52
US7304332B2Dec 4, 2007
Compound semiconductor epitaxial substrate and method for manufacturing same
SUMITOMO CHEMICAL CO0 citations52
US8901656B2Dec 2, 2014
Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor
SUMITOMO CHEMICAL CO1 citations51
US7550786B2Jun 23, 2009
Compound semiconductor epitaxial substrate
SUMITOMO CHEMICAL CO0 citations51
US7291873B2Nov 6, 2007
High electron mobility epitaxial substrate
SUMITOMO CHEMICAL CO1 citations51
US9379226B2Jun 28, 2016
Semiconductor wafer and insulated gate field effect transistor
SUMITOMO CHEMICAL CO0 citations41
US8803197B2Aug 12, 2014
Semiconductor wafer, insulated gate field effect transistor, and method for producing semiconductor wafer
SUMITOMO CHEMICAL CO0 citations41
SCIOCS CO LTD
3 patentsUS11342220B2May 24, 2022
Structure manufacturing method and manufacturing device, and light irradiation device
SCIOCS CO LTD2 citations72
US11342191B2May 24, 2022
Structure manufacturing method, structure manufacturing apparatus and intermediate structure
SCIOCS CO LTD0 citations52
US11393693B2Jul 19, 2022
Structure manufacturing method and intermediate structure
SCIOCS CO LTD0 citations51