Inventor
HOKAZONO AKIRA
JP37 patents
⚠️ This page may combine multiple inventors who share the name “HOKAZONO AKIRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
28 patentsUS7888747B2Feb 15, 2011
Semiconductor device and method of fabricating the same
TOSHIBA KK134 citations98
US7750381B2Jul 6, 2010
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK100 citations98
US7129550B2Oct 31, 2006
Fin-shaped semiconductor device
TOSHIBA KK56 citations96
US7554165B2Jun 30, 2009
Semiconductor device
TOSHIBA KK45 citations92
US6956276B2Oct 18, 2005
Semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
TOSHIBA KK24 citations92
US6881633B2Apr 19, 2005
Method of manufacturing a semiconductor device with an L-shaped/reversed L-shaped gate side-wall insulating film
TOSHIBA KK17 citations92
US6608354B2Aug 19, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK26 citations92
US6573583B2Jun 3, 2003
Semiconductor device and method of manufacturing the same
TOSHIBA KK21 citations92
US6545317B2Apr 8, 2003
Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof
TOSHIBA KK17 citations92
US6436776B2Aug 20, 2002
Process for fabricating a aligned LDD transistor
TOSHIBA KK20 citations92
US7061054B2Jun 13, 2006
Semiconductor device and semiconductor device manufacturing method
TOSHIBA KK16 citations79
US7141467B2Nov 28, 2006
Semiconductor device having metal silicide films formed on source and drain regions and method for manufacturing the same
TOSHIBA KK9 citations74
US8841191B2Sep 23, 2014
Semiconductor device and method of manufacturing same
TOSHIBA KK4 citations72
US8872271B2Oct 28, 2014
Pass gate, semiconductor memory, and semiconductor device
TOSHIBA KK2 citations63
US8049280B2Nov 1, 2011
Semiconductor device and method of fabricating the same
TOSHIBA KK2 citations63
US7985985B2Jul 26, 2011
Semiconductor device and method of fabricating the same
TOSHIBA KK4 citations63
US7427796B2Sep 23, 2008
Semiconductor device and method of manufacturing a semiconductor device
TOSHIBA KK3 citations63
US6864544B2Mar 8, 2005
Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereof
TOSHIBA KK5 citations63
US6927459B2Aug 9, 2005
Semiconductor device having a gate electrode with a sidewall insulating film and manufacturing method thereof
TOSHIBA KK3 citations62
US6875665B2Apr 5, 2005
Method of manufacturing a semiconductor device
TOSHIBA KK4 citations62
US9437735B1Sep 6, 2016
Tunnel FET
TOSHIBA KK1 citations52
US9324798B2Apr 26, 2016
Semiconductor device and method for manufacturing the same
TOSHIBA KK1 citations52
US9224850B2Dec 29, 2015
Semiconductor device and method of manufacturing the same
TOSHIBA KK1 citations52
US8841728B2Sep 23, 2014
Semiconductor device and method of manufacturing the same
TOSHIBA KK1 citations52
US8004050B2Aug 23, 2011
Semiconductor device comprising gate electrode having arsenic and phosphorous
TOSHIBA KK0 citations52
US7714364B2May 11, 2010
Semiconductor device comprising gate electrode having arsenic and phosphorus
TOSHIBA KK0 citations52
US7045409B2May 16, 2006
Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereof
TOSHIBA KK1 citations52
US9324714B2Apr 26, 2016
Semiconductor device
TOSHIBA KK0 citations41