Inventor
BHAT VISHWANATH
US68 patents
⚠️ This page may combine multiple inventors who share the name “BHAT VISHWANATH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
24 patentsUS7682924B2Mar 23, 2010
Methods of forming a plurality of capacitors
MICRON TECHNOLOGY INC57 citations97
US7557013B2Jul 7, 2009
Methods of forming a plurality of capacitors
MICRON TECHNOLOGY INC70 citations97
US7785962B2Aug 31, 2010
Methods of forming a plurality of capacitors
MICRON TECHNOLOGY INC17 citations93
US6855594B1Feb 15, 2005
Methods of forming capacitors
MICRON TECHNOLOGY INC16 citations93
US10249819B2Apr 2, 2019
Methods of forming semiconductor structures including multi-portion liners
MICRON TECHNOLOGY INC13 citations91
US7902081B2Mar 8, 2011
Methods of etching polysilicon and methods of forming pluralities of capacitors
MICRON TECHNOLOGY INC15 citations84
US7976897B2Jul 12, 2011
Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
MICRON TECHNOLOGY INC14 citations83
US7820506B2Oct 26, 2010
Capacitors, dielectric structures, and methods of forming dielectric structures
MICRON TECHNOLOGY INC10 citations83
US7618874B1Nov 17, 2009
Methods of forming capacitors
MICRON TECHNOLOGY INC8 citations83
US7115929B2Oct 3, 2006
Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials
MICRON TECHNOLOGY INC10 citations74
US7056784B2Jun 6, 2006
Methods of forming capacitors by ALD to prevent oxidation of the lower electrode
MICRON TECHNOLOGY INC10 citations74
US9627501B2Apr 18, 2017
Graded dielectric structures
MICRON TECHNOLOGY INC2 citations72
US10665782B2May 26, 2020
Methods of forming semiconductor structures including multi-portion liners
MICRON TECHNOLOGY INC2 citations71
US9236427B2Jan 12, 2016
Multi-material structures and capacitor-containing semiconductor constructions
MICRON TECHNOLOGY INC3 citations71
US9466660B2Oct 11, 2016
Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
MICRON TECHNOLOGY INC5 citations69
US8012532B2Sep 6, 2011
Methods of making crystalline tantalum pentoxide
MICRON TECHNOLOGY INC2 citations63
US7759717B2Jul 20, 2010
Capacitors comprising dielectric regions having first and second oxide material portions of the same chemical compositon but different densities
MICRON TECHNOLOGY INC1 citations63
US7635623B2Dec 22, 2009
Methods of forming capacitors
MICRON TECHNOLOGY INC4 citations63
US7439564B2Oct 21, 2008
Methods of forming capacitor constructions
MICRON TECHNOLOGY INC2 citations63
US8748283B2Jun 10, 2014
Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
MICRON TECHNOLOGY INC3 citations62
US11050020B2Jun 29, 2021
Methods of forming devices including multi-portion liners
MICRON TECHNOLOGY INC0 citations61
US9209013B2Dec 8, 2015
Constructions comprising thermally conductive stacks containing rutile-type titanium oxide
MICRON TECHNOLOGY INC1 citations61
US8927441B2Jan 6, 2015
Methods of forming rutile titanium dioxide
MICRON TECHNOLOGY INC1 citations52
US8900992B2Dec 2, 2014
Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems
MICRON TECHNOLOGY INC0 citations52
BHAT VISHWANATH
6 patentsUS8513807B2Aug 20, 2013
Semiconductor devices including a ruthenium film
BHAT VISHWANATH1 citations62
US8497566B2Jul 30, 2013
Capacitors including conductive TiOxNx
BHAT VISHWANATH2 citations62
US8450164B2May 28, 2013
Methods of forming a plurality of capacitors
BHAT VISHWANATH2 citations62
US8124528B2Feb 28, 2012
Method for forming a ruthenium film
BHAT VISHWANATH2 citations62
US8105896B2Jan 31, 2012
Methods of forming capacitors
BHAT VISHWANATH4 citations62
US8263457B2Sep 11, 2012
Methods of forming a plurality of capacitors
BHAT VISHWANATH0 citations52
KRISHNAN RISHIKESH
4 patentsUS8236372B2Aug 7, 2012
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
KRISHNAN RISHIKESH5 citations62
US8993044B2Mar 31, 2015
Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
KRISHNAN RISHIKESH2 citations61
US8861179B2Oct 14, 2014
Capacitors having dielectric regions that include multiple metal oxide-comprising materials
KRISHNAN RISHIKESH2 citations61
US8310807B2Nov 13, 2012
Capacitors having dielectric regions that include multiple metal oxide-comprising materials
KRISHNAN RISHIKESH4 citations61
ROCKLEIN NOEL
3 patentsUS8603877B2Dec 10, 2013
Methods of forming dielectric material-containing structures
ROCKLEIN NOEL6 citations82
US8760845B2Jun 24, 2014
Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same
ROCKLEIN NOEL6 citations72
US8187933B2May 29, 2012
Methods of forming dielectric material-containing structures
ROCKLEIN NOEL1 citations60
HUANG TSAI-YU
2 patentsUS8564095B2Oct 22, 2013
Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
HUANG TSAI-YU10 citations83
US8609553B2Dec 17, 2013
Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
HUANG TSAI-YU2 citations62
GEALY DAN
2 patentsANTONOV VASSIL
2 patentsINTEL CORP
1 patentROY PHILIPPE
1 patentZODIAC SEATS US LLC
1 patentMIRIN NIK
1 patentSAFRAN SEATS USA LLC
1 patentCARLSON CHRIS M
1 patentDOREL JUVENILE GROUP INC
1 patentShowing the top 50 of 68 patents by PatentIndex Score.