Inventor

ANTONOV VASSIL

US22 patents

⚠️ This page may combine multiple inventors who share the name “ANTONOV VASSIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANTONOV VASSIL

MICRON TECHNOLOGY INC

Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

Strontium ruthenium oxide interface

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

Doped titanium nitride materials for dram capacitors, and related semiconductor devices

Methods of forming rutile titanium dioxide

Methods of forming a ruthenium material, methods of forming a capacitor, and related electronic systems

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

ANTONOV VASSIL

Insulative elements

Methods of forming capacitors

Methods of forming capacitors

Capacitor structure with metal bilayer and method for using the same

Capacitors

BHAT VISHWANATH

Semiconductor devices including a ruthenium film

Method for forming a ruthenium film

Crystallographically orientated tantalum pentoxide and methods of making same

HUANG TSAI-YU

Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same

Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures

MIRIN NIK

Methods of forming and utilizing rutile-type titanium oxide

SRINIVASAN BHASKAR

Integrated circuit devices having a strontium ruthenium oxide interface

HSIEH CHUN I

Method for forming rutile titanium oxide and the stacking structure thereof