P

Inventor

WATANABE ATSUO

JP88 patents
⚠️ This page may combine multiple inventors who share the name “WATANABE ATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

29 patents
US7307313B2Dec 11, 2007

Semiconductor device including a vertical field effect transistor, having trenches, and a diode

HITACHI LTD334 citations99
US5726488AMar 10, 1998

Semiconductor device having semiconductor elements formed in a retrograde well structure

HITACHI LTD134 citations99
US6603807B1Aug 5, 2003

Isolator and a modem device using the isolator

HITACHI LTD85 citations97
US6498368B2Dec 24, 2002

Power semiconductor device

HITACHI LTD56 citations96
US5661329AAug 26, 1997

Semiconductor integrated circuit device including an improved separating groove arrangement

HITACHI LTD73 citations96
US4862240AAug 29, 1989

Complementary semiconductor device

HITACHI LTD62 citations96
US6640642B1Nov 4, 2003

Capacitance-type pressure sensor

HITACHI LTD73 citations95
US4921811AMay 1, 1990

Semiconductor integrated circuit device and a method for manufacturing the same

HITACHI LTD33 citations95
US5523598AJun 4, 1996

Semiconductor integrated circuit device

HITACHI LTD53 citations93
US5362998ANov 8, 1994

Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same

HITACHI LTD28 citations93
US7102388B2Sep 5, 2006

Interface device and information processing system

HITACHI LTD30 citations92
US6977522B1Dec 20, 2005

Interface device and information processing system

HITACHI LTD30 citations92
US6917054B2Jul 12, 2005

Semiconductor device

HITACHI LTD37 citations92
US6894346B2May 17, 2005

Semiconductor device

HITACHI LTD33 citations92
US5883403AMar 16, 1999

Power semiconductor device

HITACHI LTD29 citations92
US5710442AJan 20, 1998

Semiconductor device and method of manufacturing same

HITACHI LTD53 citations92
US5607866AMar 4, 1997

Method of fabricating a semiconductor device having silicide layers for electrodes

HITACHI LTD26 citations92
US5354699AOct 11, 1994

Method of manufacturing semiconductor integrated circuit device

HITACHI LTD33 citations92
US4799098AJan 17, 1989

MOS/bipolar device with stepped buried layer under active regions

HITACHI LTD25 citations92
US7067878B2Jun 27, 2006

Field effect transistor

HITACHI LTD13 citations84
US6657257B2Dec 2, 2003

Insulated gate field effect transistor and semiconductor integrated circuit

HITACHI LTD15 citations84
US6570240B1May 27, 2003

Semiconductor device having a lateral bipolar transistor and method of manufacturing same

HITACHI LTD13 citations84
US4963973AOct 16, 1990

Semiconductor device

HITACHI LTD17 citations82
US4388635AJun 14, 1983

High breakdown voltage semiconductor device

HITACHI LTD19 citations82
US5512497AApr 30, 1996

Method of manufacturing a semiconductor integrated circuit device

HITACHI LTD17 citations81
US5508549AApr 16, 1996

Semiconductor integrated circuit device and a method for manufacturing the same

HITACHI LTD18 citations81
US4980744ADec 25, 1990

Semiconductor integrated circuit device and a method for manufacturing the same

HITACHI LTD20 citations81
US5055904AOct 8, 1991

Semiconductor device

HITACHI LTD8 citations74
US4948994AAug 14, 1990

Semiconductor circuit for driving the base of a bipolar transistor

HITACHI LTD14 citations74

YAMAUCHI CORP

6 patents

FUJI ELECTRIC CO LTD

3 patents

YAMAUCHI RUBBER IND CO LTD

2 patents

DENSO CORP

2 patents

WATANABE ATSUO

2 patents

HITACHI SEIKI KK

1 patent

(unassigned)

1 patent

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

1 patent

HITACHI CAR ENG CO LTD

1 patent

NAT FOOD RES

1 patent

RIKEN VITAMIN CO

1 patent

Showing the top 50 of 88 patents by PatentIndex Score.