Inventor

TOMAI SHIGEKAZU

JP36 patents

⚠️ This page may combine multiple inventors who share the name “TOMAI SHIGEKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOMAI SHIGEKAZU

IDEMITSU KOSAN CO

Field effect transistor using oxide semicondutor and method for manufacturing the same

Field effect transistor using oxide semiconductor and method for manufacturing the same

Oxide semiconductor field effect transistor and method for manufacturing the same

Oxide semiconductor field effect transistor and method for manufacturing the same

Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes

In Sm oxide sputtering target

Laminated article

Garnet compound, sintered body and sputtering target containing same

Garnet compound, sintered body and sputtering target containing same

Oxide sintered body and sputtering target

Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor

Laminated body

Semiconductor device and electric apparatus using same

Oxide semiconductor substrate and schottky barrier diode

Sintered body

Oxide sintered body, sputtering target and oxide semiconductor film

Light emitting device with electrode having specified molar ratio of magnesium to zinc

Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor

Oxide semiconductor substrate and schottky barrier diode

Oxide semiconductor substrate and schottky barrier diode

INOUE KAZUYOSHI

Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing same

Semi-transmissive/semi-reflective electrode substrate, method for manufacturing same, and liquid crystal display using such semi-transmissive/semi-reflective electrode substrate

Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes

Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes

Thin film transistor having crystalline indium oxide semiconductor film

Indium oxide sintered compact and sputtering target

Indium oxide-cerium oxide based sputtering target, transparent electroconductive film, and process for producing a transparent electroconductive film

EBATA KAZUAKI

Sputtering target

Laminate structure including oxide semiconductor thin film layer, and thin film transistor

Sintered oxide body, target comprising the same, and oxide semiconductor thin film

Sputtering target

YANO KOKI

Oxide semiconductor field effect transistor and method for manufacturing the same

Field effect transistor, semiconductor device and semiconductor device manufacturing method

TSURUMA YUKI

Thin-film transistor

TOMAI SHIGEKAZU

Sintered material, and process for producing same

SHIMANE YUKIO

Amorphous transparent conductive film, target and production method for amorphous conductive film