Inventor

WEYERS JOACHIM

DE47 patents

⚠️ This page may combine multiple inventors who share the name “WEYERS JOACHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WEYERS JOACHIM

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device comprising a trench structure

VDMOS having a drift zone with a compensation structure

Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body

Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge region

Short circuit protection structure in MOS-gated power devices

Semiconductor device, electronic circuit and method for switching high voltages

Method of controlling breakdown voltage of a diode having a semiconductor body

Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body

Method for manufacturing a semiconductor device

Semiconductor device including magnetically coupled monolithic integrated coils

Semiconductor device and a manufacturing method therefor

INFINEON TECHNOLOGIES AG

Semiconductor device and temperature sensor structure for a semiconductor device

Semiconductor device with sense element

Semiconductor device having an electrostatic discharge protection structure

Silicon carbide device with transistor cell and clamp region

Semiconductor device with diode chain connected to gate metallization

Semiconductor device including a diode at least partly arranged in a trench

Silicon carbide device with transistor cell and clamp regions in a well region

Integrated circuit arrangement including a protective structure

Semiconductor diode and manufacturing method

INFINEON TECH DRESDEN GMBH & CO KG

Semiconductor device including a gate contact structure

Semiconductor device with sensor for crack detection

Method for producing a semiconductor arrangement

Semiconductor die

Method of manufacturing a semiconductor device

Semiconductor devices and methods for forming a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA

Charge compensation structure and manufacturing therefor

Charge compensation semiconductor devices

High-voltage semiconductor switch and method for switching high voltages

Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device

Field-effect semiconductor device and manufacturing therefor

WEYERS JOACHIM

Semiconductor device including a diode arranged in a trench

Semiconductor component and method for producing a semiconductor component

Semiconductor component including a lateral transistor component

Semiconductor component including a lateral transistor component

Semiconductor device with drift regions and compensation regions

INFINEON TECHNOLOGIES DRESDEN GMBH

Semiconductor device having an electrostatic discharge protection structure

Semiconductor device with electrostatic discharge protection structure

Semiconductor device

Semiconductor device comprising electrostatic discharge protection structure

Semiconductor device comprising electrostatic discharge protection structure

HIRLER FRANZ

Depletion MOS transistor and charging arrangement

Diode with controllable breakdown voltage

MAUDER ANTON

Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor body

Semiconductor device and integrated circuit including the semiconductor device