Inventor
HOU TUO-HUNG
TW25 patents
⚠️ This page may combine multiple inventors who share the name “HOU TUO-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IND TECH RES INST
6 patentsUS11625588B2Apr 11, 2023
Neuron circuit and artificial neural network chip
IND TECH RES INST8 citations85
US11599600B2Mar 7, 2023
Computing in memory cell
IND TECH RES INST2 citations71
US11145356B2Oct 12, 2021
Computation operator in memory and operation method thereof
IND TECH RES INST1 citations61
US11741189B2Aug 29, 2023
Computing in memory cell
IND TECH RES INST0 citations60
US12406721B2Sep 2, 2025
Memory cell
IND TECH RES INST0 citations50
US12142342B2Nov 12, 2024
Memory circuit with sense amplifier calibration mechanism
IND TECH RES INST0 citations50
WINBOND ELECTRONICS CORP
6 patentsUS9059391B2Jun 16, 2015
Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
WINBOND ELECTRONICS CORP9 citations82
US9715931B2Jul 25, 2017
Resistive memory apparatus and a writing method thereof
WINBOND ELECTRONICS CORP2 citations69
US10236061B2Mar 19, 2019
Resistive random access memory having charge trapping layer, manufacturing method thereof, and operation thereof
WINBOND ELECTRONICS CORP4 citations67
US9978941B2May 22, 2018
Self-rectifying resistive random access memory cell structure
WINBOND ELECTRONICS CORP0 citations47
US10056432B2Aug 21, 2018
Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture
WINBOND ELECTRONICS CORP1 citations45
US9269434B2Feb 23, 2016
Resistive memory apparatus and write-in method thereof
WINBOND ELECTRONICS CORP0 citations41
TAIWAN SEMICONDUCTOR MFG CO LTD
5 patentsUS9553199B2Jan 24, 2017
FET device having a vertical channel in a 2D material layer
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations84
US11031510B2Jun 8, 2021
Impact ionization semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations70
US10510903B2Dec 17, 2019
Impact ionization semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US11494619B2Nov 8, 2022
Device and method for operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868195B2Dec 15, 2020
Impact ionization semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7071066B2Jul 4, 2006
Method and structure for forming high-k gates
TAIWAN SEMICONDUCTOR MFG46 citations92
US6753224B1Jun 22, 2004
Layer of high-k inter-poly dielectric
TAIWAN SEMICONDUCTOR MFG36 citations90
US7303996B2Dec 4, 2007
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
TAIWAN SEMICONDUCTOR MFG14 citations81